Sciosense B.v.

Ams International Ag

Nxp B.v.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Koninklijke Philips Corporation N.v.

Datang Nxp Semiconductors Co., Ltd.

Willem Frederik Adrianus Besling

Remco Henricus Wilhelmus Pijnenburg

Olaf Wunnicke

Casper Van Der Avoort

Martijn Goossens

Freddy Roozeboom

Jörg Siegert

Peter G Steeneken

Klaus Reimann

Coenraad Cornelis Tak

Alessandro Faes

Axel Nackaerts

Kailash Vijayakumar

Jinesh Balakrishna Pillai Kochupurackal

Johan Hendrik Klootwijk

Hendrik Bouman

Anderson Singulani

Alberto Maccioni

Robert Adrianus Maria Wolters

Sophie Guillemin

Martin Schrems

Franz Schrank

Jozef Thomas Martinus Van Beek

Kim Phan Le

Zoran Zivkovic

Johannes Petrus Maria Van Lammeren

Joerg Siegert

Frederik Willem Maurits Vanhelmont

Dirk J Gravesteijn

Freek Egbert Van Straten

Marten Oldsen

Friso Jedema

Aliaksei Vladimirovich Sedzin

Cornelis Adrianus Henricus Antonius Mutsaers

Iris Bominaar-Silkens

Reinout Woltjer

René Wilhelmus Johannes Maria Van Den Boomen

Nynke Verhaegh

Coen Tak

Yann Pierre Roger Lamy

Martien Kengen

Cas Van Der Avoort

Peter Gerard Steeneken

In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.

Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm

A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Sensor package and method of producing the sensor package

In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

Semiconductor transducer device with multilayer diaphragm and method of manufacturing a semiconductor transducer device with multilayer diaphragm

In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.

Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device

A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.

Capacitive pressure with Ti electrode

A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

Attachment of stress sensitive integrated circuit dies

In an embodiment, a method for manufacturing a micro-electro-mechanical systems (MEMS) transducer device includes providing a substrate body with a surface, depositing an etch-stop layer (ESL) on the surface, depositing a sacrificial layer on the ESL, depositing a diaphragm layer on the sacrificial layer and removing the sacrificial layer, wherein depositing the sacrificial layer includes depositing a first sub-layer of a first material and depositing a second sub-layer of a second material, and wherein the first material and the second material are different materials.

A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.

Sensor arrangement and method of operating a sensor arrangement

In an embodiment a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter coupled to the pressure sensor and implemented as a delta-sigma analog-to-digital converter and a reference voltage generator having a control input configured to receive a control signal and an output configured to provide a reference voltage, wherein the output of the reference voltage generator is connected to an input of the capacitance-to-digital converter, wherein the reference voltage generator is configured to set a value of the reference voltage as a function of the control signal, and wherein at least two different values of the reference voltage have the same sign and different amounts.

In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Capacitive sensors having temperature stable output

In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Semiconductor device and method for forming a semiconductor device

In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Pressure sensor device and method for forming a pressure sensor device

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge

An integrated temperature sensor comprises a chip package enclosing an integrated circuit and an ultrasonic transceiver which is integrated on top of the integrated circuit. The ultrasonic transceiver comprises a transmitting element which is arranged for emitting ultrasound waves, and a receiving element which is arranged for receiving ultrasound waves. The chip package comprises at least one barrier arranged at a defined position in the chip package. The barrier is designed to at least partly reflect ultrasound waves emitted by the transmitting element towards the receiving element. The integrated circuit comprises an actuator element to actuate the transmitting element to emit ultrasound waves according to a first signal s(t), and a converter element to convert an ultrasound wave, received by the receiving element, into a second signal y(t). Furthermore, a method for producing an integrated temperature sensor and a method for determining a temperature by means of an integrated temperature sensor are presented.

Integrated temperature sensor, method for producing an integrated temperature sensor and method for determining a temperature by means of an integrated temperature sensor

The sensor package comprises a carrier () including electric conductors (), an ASIC device () and a sensor element (), which is integrated in the ASIC device (). A dummy die or interposer () is arranged between the carrier () and the ASIC device (). The dummy die or interposer () is fastened to the carrier (), and the ASIC device () is fastened to the dummy die or interposer ().

Growing community of inventors

Eindhoven, Netherlands

Willem Frederik Adrianus Besling