Asml Netherlands B.v.

Wilhelmus Petrus De Boeij

Erik Roelof Loopstra

Marcus Adrianus Van De Kerkhof

Jan Bernard Plechelmus Van Schoot

Christian Wagner

Johannes Catharinus Hubertus Mulkens

Vadim Yevgenyevich Banine

Damian Fiolka

Gerardus Hubertus Petrus Maria Swinkels

Tammo Uitterdijk

Tilmann Heil

Johannes Jacobus Matheus Baselmans

Johannes Hubertus Josephina Moors

Andrei Mikhailovich Yakunin

Antonius Johannes Josephus Van Dijsseldonk

Hendrikus Robertus Marie Van Greevenbroek

Roel De Jonge

Martijn Gerard Dominique Wehrens

Carsten Andreas Kohler

Christiaan Alexander Hoogendam

Hans Butler

Timotheus Franciscus Sengers

Franciscus Johannes Joseph Janssen

Hans Van Der Laan

Haico Victor Kok

Leon Martin Levasier

Maurice Willem Jozef Etiënne Wijckmans

Jan Jaap Kuit

Carolus Johannes Catharina Schoormans

Johannes Wilhelmus De Klerk

Petrus Franciscus Van Gils

Robertus Johannes Marinus De Jongh

Sander Kerssemakers

Jan Van Schoot

Michel Fransois Hubert Klaassen

Wilhelmus Jacobus Maria Rooijakkers

Ewoud Vreugdenhil

Simon De Groot

Marco Hugo Petrus Moers

Michel François Hubert Klaassen

Johannes Maria Kuiper

Erwin Johannes Martinus Giling

Marcel Maurice Hemerik

Jacob Sonneveld

Jelmer Mattheüs Kamminga

Antonius Johannes Josephus Van Dijsseldonk Van Dijsseldonk

Marinus Johanes Maria Van Dam

Johannes Wilhelmus Wilhelmus De Klerk

Gerardus Swinkels

Gerben Frank De Lange

Robert Wilhelm Willekers

Antonius Van Dijsseldonk

Hendikus Robertus Marie Van Greevenbroek

Leon Van Dooren

A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Lithographic apparatus and method

A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Lithographic apparatus, spectral purity filter and device manufacturing method

A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Lithographic method and apparatus

A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Lithographic apparatus and a method for determining a polarization property of a projection system using an adjustable polarizer and interferometric sensor

A projection system (PS) is provided which includes, in an embodiment, two frames. The optical elements of the projection system are mounted on a first frame (). The position of the optical elements is measured relative to a second frame () using a first measurement system (). A second measurement system () is used to measure a parameter associated with a deformation of the second frame. The measurement made by the second measurement system can be used to compensate for any errors in the position of the optical elements as measured by the first measurement system resulting from deformations of the second frame. Typically, deformations of the frames are due to resonant oscillation and thermal expansion. Having two frames enables the optical elements of the projection system to be positioned with a high degree of accuracy. Optionally, a temperature control system () may be provided to drive the temperature of at least one of the frames back to a desired value after the lithographic apparatus has been taken off line.

Projection system and lithographic apparatus

A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for radiation system and method for forming a spectral purity filter

A lithographic apparatus includes an illuminator configured to provide a projection beam of radiation and a polarization controller configured to control an intensity of a preferred state of polarization of the projection beam. The lithographic apparatus further includes a support configured to hold a patterning device. The patterning device configured to pattern the projection beam according to a desired pattern. The apparatus also includes a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate.

Parameter control in a lithographic apparatus using polarization

A radiation beam modification apparatus for controlling a property of a beam of radiation in a lithographic apparatus includes a flexible sheet provided with a plurality of apertures, and a positioning apparatus comprising a first rotatable member and a second rotatable member, wherein a first end portion of the flexible sheet is coupled to the first rotatable member, a second end portion of the flexible sheet is coupled to the second rotatable member and a central portion of the flexible sheet extends between the first rotatable member and the second rotatable member. The apertures may be used to control the numerical aperture of a projection system of a lithographic apparatus.

Radiation beam modification apparatus and method

A lithographic apparatus uses polarized light to improve the imaging properties such as exposure latitude, while maintaining and extending the lifetime of an illumination system in a lithographic apparatus.

Polarized radiation in lithographic apparatus and device manufacturing method

A multiple-die mask pattern is arranged with dies having the same pattern in mutually opposite orientations. The method for arranging the dies includes analyzing the pattern of a single die to identify a pattern characteristic property which is non uniformly distributed over the area of the die. If the distribution is found to be asymmetric, a line separating the die area into two half-die areas is defined with respect to which the asymmetry is apparent. Half-die areas of different dies with the same pattern characteristic property are grouped together in the mask pattern. The resulting enhanced symmetry of the distribution of the pattern characteristic property over the mask area increases lithographic processability and thereby improves die yield.

Method for patterning a radiation beam, patterning device for patterning a radiation beam

A lens element comprises a first face and a second face, where the first face comprises a plurality of concave shaped lens parts. Each concave shaped lens part is arranged to focus a portion of a beam incident on the second face via a liquid on a single flat surface.

Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby

A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a detector for measuring the intensity of the radiation after it has passed through the projection system. The apparatus further includes a polarization changing element, such as a quarter-wave plate, that is adjustable; and a polarization analyzer, such as a linear polarizer, wherein the polarization changing element and the polarization analyzer are arranged in order in the radiation beam path at the level at which a patterning device would be held by the support. By taking intensity measurements, using the detector, for different rotational orientations of the polarization changing element, information on the state of polarization of the radiation at the level of the patterning device can be obtained. Because the polarization analyzer is located before the projection system, the measurements are not affected by the fact that the detector is located after the projection system, such as at the level of the substrate.

Lithographic apparatus

A lithographic apparatus comprises an illumination system having optical elements capable of conditioning a radiation beam to comprise in cross-section a first portion of linearly polarized radiation and a second portion of unpolarized or circularly polarized radiation. The apparatus further comprises a support constructed to support a patterning device is provided, the patterning device being capable of imparting the illuminating radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is provided to hold a substrate, whilst a projection system is provided and configured to project the patterned radiation beam onto a target portion of the substrate.

Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method

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Veldhoven, Netherlands

Wilhelmus Petrus De Boeij