Q-Cells Se

Fei Comapny

Technische Universiteit Eindhoven

Otb Group B.v.

L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Wilhelmus Mathijs Marie Kessels

Nicolas Blasco

Gijs Dingemans

Robert Seguin

Franciscus Cornelius Dings

Johannes Jacobus Lambertus Mulders

Alan Frank De Jong

Christophe Lachaud

Peter Engelhart

Martin Dinant Bijker

Michael Adrianus Theodorus Hompus

Mauritius Cornelis Maria Van De Sanden

Sven Wanka

Adriaan Jacobus Martinus Mackus

Lachlan Edward Black

Stephen Potts

Alain Madec

A photovoltaic cell includes a silicon substrate having two opposite main surfaces. A first main surface of the two main surfaces is covered with a passivation layer stack, including a PO- and Al-including-layer covering the first main surface, and a capping layer which covers the PO- and Al-including-layer. A method for manufacturing a photovoltaic cell is also disclosed.

Photovoltaic cell and a method for manufacturing the same

A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 10cm, preferably of at least 5&#xd7;10cm, and more preferably of at least 10cm.

Solar cell

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Semiconductor device, in particular solar cell

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapor Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

Method for forming microscopic structures on a substrate

A method for the passivation of a semiconductor substrate, wherein a SiN:H layer is deposited on the surface of the substrate () by means of a PECVD process comprising the following steps:

Method for passivating a semiconductor substrate

Growing community of inventors

Tilburg, Netherlands

Wilhelmus Mathijs Marie Kessels