Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Christian-Albrechts-Universitat Zu Kiel

Albert-Ludwigs-Universität Frieburg

Albert-Ludwigs-Universitat Freiburg

Wilhelm Warta

Helmut Föll

Jürgen Carstensen

Martin Kasemann

Andreas Schütt

Johannes Giesecke

Martin Schubert

A measuring method and device for characterizing a semiconductor component () having a pn junction and a measuring surface, which has a contacting subarea, covered by a metallization. The method including: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component () for separating charge carrier pairs in the semiconductor component (), and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component () using a detection unit. In one step A, a predetermined excitation subarea of the measuring surface has a predetermined intensity of the excitation radiation and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the intensity applied to the excitation subarea. The excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and/or entirely or partially overlap it.

Measuring method and device for characterizing a semiconductor component

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Freiburg, Germany

Wilhelm Warta