Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Carl-zeiss-stiftung

Carl Zeiss Semiconductor Manufacturing Technologies Ag

Other

Carl Zeiss Microscopy Gmbh

Carl Zeiss Ag

Carl Zeiss Semiconductor

Zeiss Smt Ag

Carl-ziess-stiftung

Wilhelm Ulrich

Hans-Juergen Mann

Aurelian Dodoc

Alexander Epple

David R Shafer

Wolfgang Singer

Karl-Heinz Schuster

Rudolf Von Buenau

Daniel Kraehmer

Hans-Juergen Rostalski

Helmut Beierl

Toralf Gruner

Susanne Beder

Russell M Hudyma

Norbert Wabra

Martin Antoni

Ulrich Loering

Johannes Wangler

Udo Dinger

Heiko Feldmann

Marco Pretorius

Winfried M Kaiser

Vladan Blahnik

Christian Wagner

Michael Gerhard

Joerg Schultz

Manfred Maul

Johannes Zellner

Gerhard Fuerter

Birgit Enkisch

Martin Brunotte

Daniel Krähmer

Christof Zaczek

Michael Totzeck

Hans-Jürgen Mann

Reiner Garreis

Volker Graeschus

Bernhard Gellrich

Rolf Freimann

Boris Bittner

Alois Herkommer

Paul Graeupner

Christoph Menke

Rafael Egger

Karl Heinz Schuster

Guenther Seitz

Joerg Mallmann

Dieter Bader

Hans-Jurgen Mann

Thomas Okon

Gerhard F&uuml;rter

Erik Roelof Loopstra

Ralf Wolleschensky

Damian Fiolka

Hubert Holderer

Martin Endres

Hartmut Enkisch

Thomas Schicketanz

Franz Muchel

Ralf Mueller

Christoph Zaczek

Matthias Manger

Andreas Wurmbrand

Bernd Doerband

Juergen Fischer

Olaf Conradi

Stephan Muellender

Holger Walter

Albrecht Hof

Jörg Schultz

Rudolf Von B&uuml;nau

Artur Degen

Wolfgang Harnisch

Marco Wedowski

Dieter Pauschinger

Klaus-Peter Koch

Thomas Engel

Alexander Sohmer

Gerd Furter

Axel Zibold

Wolfgang Reinecke

Paul Gräupner

Gerd F&uuml;rter

Albrecht Ranck

Lothar Rubl

Werner P&ouml;ltinger

Hans-J&uuml;rgen Mann

Russel Hudyma

Han-Juergen Mann

Vladimir Kamenow

Günther Seitz

Rudolf Tannert

Vladimer Kamenov

Gerhard Fürter

Karl-Hein Schuster

Jean Claude Perrin

G&uuml;nther Seitz

Christian Hauger

Claus Zahlten

An imaging optical system has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The result is an imaging optical system that provides a combination of small imaging errors, manageable production and a good throughput for the imaging light.

Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type

An apparatus for imaging a sample arranged in a first medium in an object plane. The apparatus includes an optical transmission system which images the sample in the object plane in an intermediate image in an intermediate image plane. The object plane and the intermediate image plane form an angle not equal to 90&#xb0; with an optical axis of the transmission system. The apparatus further comprises an optical imaging system having an objective. The object plane may be imaged on a detector without distortion. The optical transmission system is symmetrical with respect to a pupil plane, the object plane, and the intermediate image plane to satisfy the Scheimpflug condition. The intermediate image lies in a second medium having a refractive index virtually identical to that of the first medium. A lens group of a subsystem arranged closest to the sample or intermediate image comprises at least one catadioptric assembly.

Device for imaging sample

A lithography projection objective for imaging a pattern in an object plane onto a substrate in an image plane. The projection objective comprises a multiplicity of optical elements along an optical axis. The optical elements comprise a first group of optical elements following the object plane, and a last optical element, following the first group and next to the image plane. The projection objective is tunable or tuned with respect to aberrations for the case that the volume between the last optical element and the image plane is filled by an immersion medium with a refractive index substantially greater than 1. The position of the last optical element is adjustable in the direction of the optical axis. A positioning device is provided that positions at least the last optical element during immersion operation such that aberrations induced by disturbance are at least partially compensated.

Lithography projection objective, and a method for correcting image defects of the same

A projection objective configured to image an object field in an object plane into an image field in an image field plane includes a reflective unit, a first refractive unit, and a second refractive unit. An optical axis of the first refractive unit is parallel to but displaced from an optical axis of the second refractive unit. The reflective unit includes a first curved mirror and a second curved mirror. The second curved mirror is immediately downstream from the first curved mirror in a path of light from the object plane to the image plane. The projection objective is a microlithography projection objective.

Catadioptric projection objective with parallel, offset optical axes

A catadioptric projection objective has a first objective part, defining a first part of the optical axis and imaging an object field to form a first real intermediate image. It also has a second, catadioptric objective part forming a second real intermediate image using the radiation from the first objective part. The second objective part has a concave mirror and defines a second part of the optical axis. A third objective part images the second real intermediate image into the image plane and defines a third part of the optical axis. Folding mirrors deflect the radiation from the object plane towards the concave mirror; and deflect the radiation from the concave mirror towards the image plane. The first part of the optical axis defined by the first objective part is laterally offset from and aligned parallel with the third part of the optical axis.

Catadioptric projection objective with intermediate images

A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength &#x3bb; from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3&#xb0; or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

Microlithography projection optical system, tool and method of production

In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength &#x3bb; from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about &#x3bb; or more at one or more locations of the rotationally-asymmetric surface.

Catoptric objectives and systems using catoptric objectives

In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.

Imaging optical system and illumination optical system

A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

Projection exposure system and projection exposure method

Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

Imaging optics and projection exposure installation for microlithography with an imaging optics

A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength &#x3bb; from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3&#xb0; or more with respect to the normal to the object plane. This can allow the use of phase shifting masks as objects to be imaged, in particular for EUV wavelengths.

Growing community of inventors

Aalen, Germany

Wilhelm Ulrich