Osram Opto Semiconductors Gmbh

Osram Gmbh

Wilhelm Stein

Ralph Wirth

Andreas Ploessl

Berthold Hahn

Michael Fehrer

Stefan Illek

Johannes Baur

Stephan Kaiser

Ines Pietzonka

Tony Albrecht

Walter Wegleiter

Franz Eberhard

Peter Stauss

Matthias Winter

Gudrun Diepold

Peter Brick

Dominik Eisert

Reiner Windisch

Stefan Bader

Andreas Plössl

Roland Zeisel

Johannes Völkl

Robert Walter

Michael Zoelfl

Oliver Kus

In a method for producing at least at least one area () with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (), a ZnO layer () is applied to the area () of the semiconductor layer () and subsequently annealed at a temperature preferably between 300&#xb0; C. and 500&#xb0; C. The ZnO layer () is preferably deposited on the III-V semiconductor layer () at a temperature of less than 150&#xb0; C., preferably at a temperature greater than or equal to 25&#xb0; C. and less than or equal to 120&#xb0; C. The area () with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone () and a connecting contact () in order to reduce current injection into the areas of the active zone () located opposite to the connecting contact ().

Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element

A method for producing an electrical contact of an optoelectronic semiconductor chip (), comprising providing a mirror layer (), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer () over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer () over said protective layer; and providing a solder layer () over said layer sequence.

Method for producing an electrical contact for an optoelectronic semiconductor chip

A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (), a second principal surface () and a semiconductor layer sequence () with an electromagnetic radiation generating active zone (), in which the semiconductor layer sequence () is disposed between the first and the second principal surfaces (), a first current spreading layer () is disposed on the first principal surface () and electrically conductively connected to the semiconductor layer sequence (), and a second current spreading layer () is disposed on the second principal surface () and electrically conductively connected to the semiconductor layer sequence ().

Radiation emitting semi-conductor element

A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer. Here, the brightness setting layer includes at least one electrically insulating current blocking region and at least one electrically conductive current passage region via which the connection region is electrically conductively connected to the semiconductor layer sequence such that, during operation of the semiconductor chip, part of the electromagnetic radiation generated in the chip is generated below the connection region and is absorbed by the connection region.

Radiation-emitting semiconductor chip and method for producing such a semiconductor chip

A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (). The component comprises a semiconductor body with a semiconductor layer sequence () having a lateral main direction of extension and an active zone () provided for generation of radiation. A radiation-transmissive contact layer () is arranged within the resonator and is electrically conductively connected to the semiconductor body.

Surface emitting-semiconductor laser component featuring emission in a vertical direction

A radiation-emitting semiconductor component having a semiconductor body (), which has an active zone (), in which, for the purpose of electrical contact connection, a patterned contact layer () is applied on a surface of the semiconductor body. Interspaces () are distributed over the contact layer () and are provided for the purpose of forming free areas () on the surface which are not covered by the contact layer (). The free areas () are covered with a mirror (). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

Radiation-emitting semiconductor element

A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Method for fabricating a component having an electrical contact region

Method for fabricating a component having an electrical contact region, and component having an electrical contact region

An electrical contact for an optoelectronic device which includes a mirror layer () of a metal or a metal alloy, a protective layer (), which serves for reducing the corrosion of the mirror layer (), a barrier layer (), a coupling layer (), and a solder layer (). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Electrical contact for optoelectronic semiconductor chip and method for its production

A radiation-emitting semiconductor component with a layer structure () which includes a photon-emitting active layer (), an n-doped cladding layer () and a p-doped cladding layer (), a contact connected to the n-doped cladding layer () and a mirror layer () connected to the p-doped cladding layer (). The mirror layer () is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

Radiation-emitting semiconductor component

An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer. The contact layer is provided with watertight material in such a way that it is substantially protected against moisture.

Growing community of inventors

Donaustauf, Germany

Wilhelm Stein