Varian Semiconductor Equipment Associates, Inc.

Axcelis Technologies, Inc.

Morpho Detection, Inc.

Advanced Ion Beam Technology, Inc.

Adavanced Ion Beam Technology, Inc.

Wilhelm P Platow

Neil J Bassom

Craig Richard Chaney

Alexander S Perel

Peter F Kurunczi

Bon-Woong Koo

Frank Sinclair

Eric R Cobb

Costel Biloiu

Marvin Farley

Shu Satoh

Christopher W Campbell

D Jeffrey Lischer

Robert C Lindberg

Kourosh Saadatmand

Shardul Patel

Stanislav S Todorov

Rajesh Dorai

Paul B Silverstein

Victor M Benveniste

Svetlana Radovanov

Kenneth Harry Purser

Bo H Vanderberg

Zhimin Wan

Robert E Kaim

Edward Eisner

Ching-I Li

James S Buff

Ger-Pin Lin

Tyler Burton Rockwell

Michael Cristoforo

Joshua M Abeshaus

David P Sporleder

Hanh Lai

Jaime M Reyes

Steven C Borichevsky

Chris Campbell

David Hoglund

Mayur Jagtap

John (Bon-Woong) Koo

Rekha Padmanabhan

Gary N Cai

Vibha Mishra

Charles M Free

John Bon-Woong Koo

David J Twiss

John B Cracchiolo

Raymond Callahan

David Olson

Jonathan David

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

High energy implanter with small footprint

An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

Dual source injector with switchable analyzing magnet

An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.

Extended lifetime dual indirectly-heated cathode ion source

An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

Ion source with multiple bias electrodes

An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

Stepped indirectly heated cathode with improved shielding

An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.

Tetrode extraction apparatus for ion source

The present disclosure is directed to methods and systems for detecting a substance in a sample gas. The methods and systems include separating the substance of interest in the sample gas, and introducing the separated sample gas into a detector. The systems and methods further include performing an analysis of the substance of interest.

Systems and methods for gas pre-separation for detection of substances

A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion source chamber may be grounded, while the suppression electrode is biased using a power supply having a high current capability. The voltage applied to the suppression electrode creates a plasma between the suppression electrode and the ion source chamber, and between the suppression electrode and the ground electrode.

Techniques for improving the performance and extending the lifetime of an ion source

A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Method for ion implantation

A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Medium current ribbon beam for ion implantation

An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

Ion source and a method for in-situ cleaning thereof

Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube.

Internal RF antenna with dielectric insulation

Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Techniques for improving extracted ion beam quality using high-transparency electrodes

Growing community of inventors

Somerville, MA, United States of America

Wilhelm P Platow