Intel Corporation

Wilhelm Melitz

Jack T Kavalieros

Gilbert W Dewey

Matthew V Metz

Van H Le

Abhishek A Sharma

Benjamin Chu-Kung

Sean T Ma

Shriram Shivaraman

Miriam Ruth Reshotko

Kent Millard

Inanc Meric

Embodiments disclosed herein include thin film transistors and methods of forming such thin film transistors. In an embodiment, the thin film transistor may comprise a substrate, a gate electrode over the substrate, and a gate dielectric stack over the gate electrode. In an embodiment, the gate dielectric stack may comprise a plurality of layers. In an embodiment, the plurality of layers may comprise an amorphous layer. In an embodiment, the thin film transistor may also comprise a semiconductor layer over the gate dielectric. In an embodiment, the semiconductor layer is a crystalline semiconductor layer. In an embodiment, the thin film transistor may also comprise a source electrode and a drain electrode.

Multi-dielectric gate stack for crystalline thin film transistors

Growing community of inventors

Portland, OR, United States of America

Wilhelm Melitz