Robert Boschgmbh

Leland Stanford Junior University

Carnegie Mellon University

Wilhelm Frey

Franz Laermer

Karsten Funk

Zhiyu Pan

Andreas Niendorf

Markus Lutz

Aaron Partridge

Frank Fischer

Gary Yama

Hans Artmann

Klaus Heyers

Markus Ulm

Brian H Stark

Bernhard Elsner

Matthias Metz

Lars Metzger

Manfred Moellendorf

Christoph Duenn

Gary Keith Fedder

Huikai Xie

Udo Bischof

Bhaskar Srinivasan

Frank Henning

Robert N Candler

Heinz-Georg Vossenberg

Thomas Moelkner

Frank Klopf

Juergen Kober

Volker Materna

Dirk Lange

Marc Layer

A device for determining a pressure and a method for manufacturing the same, having a housing including a cavity, a sensor device including a first sealing structure which engages with the housing so that an opening of the cavity is closable with the aid of the sensor device, in which the sensor device is configured for determining a pressure which is applied to the cavity, and a sealing device situated between the housing and the sensor device and configured for pressing the first sealing structure on the housing by exerting a contact force on the sensor device.

Device for determining a pressure and method for manufacturing the same

A construction concept for high-pressure sensors is provided, which enables simple and economical production of reliable high-pressure sensors even for pressure ranges above 2200 bar. A high-pressure sensor of this kind encompasses a sensor element for pressure sensing and a connector piece for coupling the sensor element to a system to be measured. A diaphragm is embodied in the base element of the sensor element, and a pressure conduit is embodied in the base element of the connector piece. The sensor element is mounted on the connector piece so that the pressure to be measured is able to act upon the diaphragm via the pressure conduit. Firstly the base element of the sensor element is mounted on the base element of the connector piece, a full-area connection being generated between the mounting surfaces of the two base elements. Only thereafter is the pressure conduit configured in the connector piece, and the diaphragm of the sensor element exposed.

Method for producing high-pressure sensors

A mechanical structure is disposed in a chamber, at least a portion of which is defined by the encapsulation structure. A first method provides a channel cap having at least one preform portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. A second method provides a channel cap having at least one portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. The at least one portion is fabricated apart from the electromechanical device and thereafter affixed to the electromechanical device. A third method provides a channel cap having at least one portion disposed over or in at least a portion of the anti-stiction channel to seal an anti-stiction channel, at least in part. The at least one portion may comprise a wire ball, a stud, metal foil or a solder preform. A device includes a substrate, an encapsulation structure and a mechanical structure. An anti-stiction layer is disposed on at least a portion of the mechanical structure. An anti-stiction channel is formed in at least one of the substrate and the encapsulation structure. A cap has at least one preform portion disposed over or in at least a portion of the anti-stiction channel to seal the anti-stiction channel, at least in part.

Anti-stiction technique for electromechanical systems and electromechanical device employing same

A zinc/air battery includes a plurality zinc/air battery cells and an arrangement for exposing the plurality of zinc/air battery cells to air wherein the exposing arrangement opens the plurality of zinc/air battery cells in a serial manner such that only one cell is operative at a time.

Zinc/air battery with improved lifetime

An arrangement for use with a micro-mechanical beam, in which a plurality of support structures are configured to directly attach to the micro-mechanical beam to increase bending stiffness of the micro-mechanical beam without significantly influencing torsional stiffness. At least two of the support structures are arranged to touch each upon reaching a predetermined bending action of the micro-mechanical beam and prevent a further bending action of the micro-mechanical beam, and at least two of the support structures are non-identical.

Micro-mechanical beam protective support structures wherein at least two adjacent support structures touch each other upon reaching a predetermined bending action

There are many inventions described and illustrated herein, as well as many aspects and embodiments of those inventions. In one aspect, the present invention is directed to a resonator architecture including a plurality of in-plane vibration microelectromechanical resonators (for example, 2 or 4 resonators) that are mechanically coupled to provide, for example, a differential signal output. In one embodiment, the present invention includes four commonly shaped microelectromechanical tuning fork resonators (for example, tuning fork resonators having two or more rectangular-shaped or square-shaped tines). Each resonator is mechanically coupled to another resonator of the architecture. For example, each resonator of the architecture is mechanically coupled to another one of the resonators on one side or a corner of one of the sides. In this way, all of the resonators, when induced, vibrate at the same frequency.

In-plane mechanically coupled microelectromechanical tuning fork resonators

An arrangement for a micro-mechanical beam includes a support structure to provide an increase in bending stiffness of the micro-mechanical beam without significantly influencing torsional stiffness, where the support structure is configured to directly attach to the micro-mechanical beam.

Apparatus, method and system for providing enhanced mechanical protection for thin beams

A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.

Method for producing micromechanical structures and a micromechanical structure

Methods of fabricating micromachined devices are disclosed, as are micromachined (MEMS) devices fabricated using such methods. According to one embodiment, the method includes forming a composite thin film layer stack on a substrate such that composite thin film layer stack comprises a plurality of etch-resistant layers, directionally etching a first portion of the composite thin film layer stack selectively masked by a first etch-resistant layer thereof, and directionally etching a first portion of the substrate selectively masked by the first etch-resistant layer. These steps may result in the formation of a composite thin film microstructure. The method further includes isotropically etching a second portion of the substrate for a controlled period of time to remove substrate material from under the composite thin film microstructure, removing a portion of the first etch-resistant layer and directionally etching a second portion of the composite thin film layer stack selectively masked by a second etch-resistant layer, and directionally etching a third portion of the substrate selectively masked by the second etch-resistant layer to define a second microstructure, the second microstructure comprising a composite thin film layer stack portion and a substrate layer portion. The method may include backside etching the substrate prior to directionally etching the first portion of the composite thin film layer stack and/or removing the composite thin film layer stack portion from the second microstructure after directionally etching the third portion of the substrate. The composite thin film layer stack may include a CMOS circuitry layer stack and the substrate may include single-crystal silicon (SCS).

Method of fabricating microstructures and devices made therefrom

A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer. Further, a method is described for producing integrated microsystems having silicon-germanium functional layers, sacrificial layers containing germanium, and open metal surfaces. The sacrificial layers containing germanium are at least partially removed in an etching solution, a pH value of the etching solution being kept at least approximately neutral during the etching procedure using a buffer.

Method for producing integrated microsystems

A method of manufacturing a micromechanical component has the steps: providing a substrate having a front side and a back side; structuring the front side of the substrate; at least partially covering the structured front side of the substrate with a protective layer containing germanium; structuring the back of the substrate; and at least partially removing the protective layer containing germanium from the structured front side of the substrate.

Method of manufacturing a micromechanical component

A sensor arrangement for measuring a displacement of a proof mass using a tunneling current includes a proof mass body suspended by micro-mechanical beams to permit a mass body movement, at least one integrated electrode tip arranged to be integrated with the proof mass body, and at least one external electrode tip arranged externally to the proof mass body and suspended by micro-mechanical beams to permit an external electrode movement, the at least one external electrode tip further arranged to be in a close proximity to the at least one integrated electrode tip to permit a flow of the tunneling current between the at least one external electrode tip and the at least one integrated electrode tip, in which the displacement of the proof mass causes a change in the tunneling current.

Differential in-plane tunneling current sensor

A method is described for producing surface micromechanical structures having a high aspect ratio, a sacrificial layer being provided between a substrate and a function layer, trenches being provided by a plasma etching process in the function layer, at least some of these trenches exposing surface regions of the sacrificial layer. To increase the aspect ratio of the trenches, an additional layer is deposited on the side walls of the trenches in at least some sections, but not on the exposed surface regions of the sacrificial layer. In addition, a sensor is described, in particular an acceleration sensor or a rotational rate sensor.

Growing community of inventors

Palo Alto, CA, United States of America

Wilhelm Frey