International Business Machines Corporation

Wilhelm E Bogholtz

George E Keefe

George S Almasi

Louis J Bosch

Albert A Lennon, Jr

James R Kiseda

Robert A Downing

Alfred A Rifkin

Edgar W Scott

A magnetic bubble domain storage device comprising a plurality of storage shift registers and at least one major shift register, which serves to provide bubble domains to the storage register and to receive bubble domains from the storage registers. A novel transfer switch, or gate, is located between each of the storage registers and the major register, which is typically configured in the conventional major/minor loop type of storage organization. This transfer switch can be made using single level masking or multiple level masking and is characterized in that the locus of bubble domain propagation paths through the switch element generally defines the letter 'Y'. These propagation paths are from one arm of the Y to the other arm, from one arm of the Y to the stem or base portion, or the reverse where a bubble domain travels from the stem (base) of the Y to one of the arms of the Y. In a particular embodiment, the transfer switch is comprised of a Y-shaped magnetic element having a current carrying conductor which crosses the stem portion of the Y-shaped magnetic element. The particular path travelled by bubble domains through the transfer switch is determined by the presence or absence of a current through the conductor. Thus, the transfer switch is characterized by at least one magnetic element having a current path crossing the stem portion of the element(s). The exact shape, width, length, and thickness of the magnetic element, or elements, of the transfer switch can be chosen by the designer in accordance with the propagation structures that are desired. What is important is that the plurality of paths which the bubbles can follow generally define a Y, where the current path through the transfer switch crosses the path which is along the stem portion of the Y defined by the plurality of propagation paths available.

Bubble domain storage using improved transfer switch

A multi-layered package for a magnetic domain device including self-contained in-plane switching magnetic field coils surrounding one or more magnetic domain device chips and a permanent magnet surrounding the switching magnetic field coils. The switching coils are formed by two printed circuit layers, each layer comprising an insulating substrate having striped conductive patterns orthogonally oriented relative to each other on the opposite surfaces of the insulating layer. The ends of the striped conductors on one printed circuit layer are connected to the ends of the corresponding striped pattern on the other printed circuit layer so as to form one of the switching coils. The ends of the other pair of striped conductive patterns are similarly connected to form the second switching coil. The magnetic domain device chips are placed inside the formed switching coils which, in turn, are surrounded by the permanent magnet.

Packaged magnetic domain device having integral bias and switching

Growing community of inventors

Wappingers Falls, NY, United States of America

Wilhelm E Bogholtz