Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Sabic Global Technologies B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Wilhelm A Groen

Bernd Rausenberger

Sybrand Van Der Zwaag

Jibran Khaliq

Mareike K Klee

Horst Dannert

Albrecht Kraus

Knuth Albertsen

Ibrahim Al-Howaish

Jesus Alfonso Caraveo Frescas

Redha Bella

Nijesh K James

Cornelis Reinder Ronda

Edsger Constant Pieter Smits

Gijsbertus De With

Bennie Josephus De Maagt

Volker U Weiler

Petra Huppertz

Marcellinus J Kraan

Antonius J M Nellissen

Wilhelmus M P Van Kemenade

Cornelis J M Denissen

Milan Saalmink

Cornelis Hermanus Arnoldus Rentrop

Hans P Lobl

Paul Van Oppen

Valerie R C M J Sillen

Nicolaas J A Van Veen

Srdjan Kordic

Cornelis A H A Mutsaers

Jesus Alfonso Caraveo-frescas

The disclosure concerns filled a polymer composite comprising a piezoelectric filler and a polymer resin. The composite may exhibit a piezoelectric coefficient d33 of greater than 30 pC/N when measured according to the Berlincourt Method using a d33 piezometer and a density of less than 5 g/cc according to the Archimedes method.

Flexible and low cost piezoelectric composites with high dvalues

A lead-free lithium doped potassium sodium niobate piezoelectric ceramic material in powdered form and having a single crystalline phase and uses thereof are described. Methods of making the said piezoelectric ceramic material are also described.

Shape-controlled ceramic fillers for enhanced piezoelectric properties of structured composites

A lead-free lithium doped potassium sodium niobate piezoelectric ceramic material powdered form and having a single crystalline phase and uses thereof are described. Methods of making the said piezoelectric ceramic material are also described.

A printed temperature sensor () comprising a substrate () with an electrical circuit () comprising a pair of electrodes () separated by an electrode gap (G). A sensor material () is disposed between the electrodes () to fill the electrode gap (G), wherein the sensor material () comprises semi-conducting micro-particles () comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles () are mixed in a dielectric matrix () functioning as a binder for printing the sensor material (); wherein the micro-particles () contact each other to form an interconnected network through the dielectric matrix (), wherein the interconnected network of micro-particles () acts as a conductive pathway with negative temperature coefficient between the electrodes ().

Printed temperature sensor

The invention relates to a low-pressure gas discharge lamp which includes at least one discharge vessel and at least two capacitive coupling-in structures and operates at an operating frequency f. In order to achieve a better efficiency in combination with a small structural volume, a high luminous flux, a low operating voltage, a low electromagnetic emission, a high resistance against switching transients and a long service life for the low-pressure gas discharge lamp, it is proposed to form each capacitive coupling-in structure from at least one dielectric having a thickness d and a dielectric constant &#x2208;, each dielectric being subject to the condition d/(f.&#x2208;)&#x3c;10cm&#xb7;s. A substantially larger amount of light can thus be generated per lamp length (lumen/cm).

Device for the backlighting of a liquid crystal display that includes at least one low-pressure gas discharge lamp

The invention relates to a low-pressure gas discharge lamp which includes at least one discharge vessel and at least two capacitive coupling-in structures and operates at an operating frequency f. In order to achieve a better efficiency in combination with a small structural volume, a high luminous flux, a low operating voltage, a low electromagnetic emission, a high resistance against switching transients and a long service life for the low-pressure gas discharge lamp, it is proposed to form each capacitive coupling-in structure from at least one dielectric having a thickness d and a dielectric constant &#x3b5;, each dielectric being subject to the condition d/(f.&#x3b5;)&#x3c;10cm.s. A substantially larger amount of light can thus be generated per lamp length (lumen/cm).

Low-pressure gas discharge lamp

A gas discharge lamp with at least one capacitive coupling structure ( ) is described, which lamp has the particular characteristic that the coupling structure ( ) comprises a ceramic material which comprises pure BaTiO . In particular an additional doping of at least part of the BaTiO with barium leads to a material whose Curie temperature and saturation polarization are substantially higher and whose coercitive field strength is substantially smaller, so that a gas discharge lamp with a coupling structure manufactured from this material can be operated at substantially higher temperatures and at a lower operating voltage. Various dopings of the BaTiO with titanium, manganese, and lead are furthermore described.

Gas discharge lamp

Liquid crystal picture screen with improved backlighting

The invention relates to a circuit arrangement comprising an SMD-component ( ), in particular a temperature sensor with a thermistor element ( ), having two electroconductive contacts ( ), which are each conductively connected to a conductor track ( ) provided on a substrate ( ). A firm, mechanical connection as well as a good electroconductive connection between the SMD-component and the conductor tracks is achieved in that the contacts ( ) are each made of a metal-glass layer ( ) forming the connection to the conductor tracks ( ), and in that the metal-glass layer ( ) is manufactured by heating a glass particle-containing metal until melting or softening of the glass particles occurs. The invention also relates to a method of manufacturing a temperature sensor and to a method of manufacturing such a connection.

Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor

The present invention provides a new type of thin-film capacitor which is insensitive to breakdown voltages during its mounting on a printed circuit board. Said capacitor has an insulating substrate having at least two internal electrode layers which are mutually separated by means of a dielectric layer. The substrate also has two end contacts each of which are electroconductively connected to one of said internal electrode layers. According to the invention, the capacitor also has breakable electrically conductive means, preferably formed as a metal layer, which means are electrically connected to said end contacts. The presence of said breakable electrically conductive means between said end contacts prevents damage due to electrical storage which can arise during the mounting of the capacitor on a printed circuit board.

Thin-film capacitor

A low-pressure mercury vapor discharge lamp is provided with a discharge vessel and a first and a second end portion (,). The discharge vessel encloses a discharge space provided with a filling of mercury and a rare gas in a gastight manner. Each end portion (,) supports an electrode (,) arranged in the discharge space. An electrode shield (,) encompasses the electrodes (,) and is covered with a material which reacts with or forms an alloy with alkaline earth metals, which material is released by the electrode (,).

Low-pressure mercury vapor discharge lamp with electrode shield

A semiconductor device, for example an IC, having conductor tracks (,) of a metal (,) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The tracks are situated on an insulating layer (,) and are connected to a semiconductor region (,A) or to an aluminium conductor track by means of a metal plug (,), for example of tungsten, which is situated in an aperture (,) in the insulating layer (,). The bottom and walls of the aperture (,) are provided with an electroconductive material (,), such as titanium nitride, which forms a diffusion barrier for the metal (,). In accordance with the invention, the insulating layer (,) comprises a sub-layer (,A), which forms a diffusion barrier for the metal (,) and which extends, outside the aperture (,), throughout the surface of the semiconductor body (,). As a result, the conductor tracks (,) no longer have to be provided with a sheath serving as a diffusion barrier for the metal (,). The conductor tracks (,) may thus have a cross-section of very small dimensions, while the electric resistance will is still be sufficiently low. The same applies for any further conductor tracks (,), which may be present above the conductor tracks (,) and which are electrically insulated therefrom. Preferably, the electrically insulating sub-layer (,A) is situated approximately in the middle of the insulating layer (,). By virtue thereof, the contribution of the sub-layer (,A) to capacitances threatening the velocity of the IC is minimized. Suitable materials for the sub-layer (,A) are oxides, nitrides, fluorides and carbides, for example aluminium oxide, magnesium fluoride or silicon carbide. The insulating layers (,) preferably comprise silicon dioxide.

Semiconductor device and method of manufacturing such a device

A thermistor comprising a semiconductor ceramic with an oxide spinel, which contains the elements maganese, nickel and indium. Thermistors of said composition are thermally stable and are characterized by a high resistivity and a high B-value.

Indium-containing, oxide-ceramic thermistor

The invention provides a ceramic body and a method of manufacturing such a body. The body is characterized by its composition, which comprises 20-30 at. % of magnesium, 20-30 at. % of silicon, 40-60 at. % of nitrogen and maximally 15 at. % of oxygen. A preferred composition corresponds to the formula MgSiN.sub.2-x O.sub.x, where x is smaller than 0.5. The manufacture of the ceramic body in accordance with the invention is simpler and cheaper than that of aluminium nitride, and a number of properties of said ceramic material are better than those of the known aluminium oxide.

Growing community of inventors

Limbricht, Netherlands

Wilhelm A Groen