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Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Wacker Siltronic Gesellschaft F{umlaut Over (u)}r Halbleitermaterialien Ag

Wilfried Von Ammon

Martin Weber

Herbert Schmidt

Reinhold Wahlich

Janis Virbulis

Ludwig Altmannshofer

Erich Tomzig

Joerg Fischer

Katsuhiko Nakai

Walter Haeckl

Helge Riemann

Atsushi Ikari

Christoph Seuring

Rüdiger Schmolke

Brian Murphy

Timo Mueller

Andreas Sattler

Erich Daub

Christoph Frey

Yuri Gelfgat

James Moreland

Peter Storck

Erich Dornberger

Andreas Huber

Thomas Schroeck

Gudrun Kissinger

Ulrich Lambert

Paul Fuchs

Wolfgang Siebert

Friedrich Passek

Manfred Grundner

Peter Krottenthaler

Klaus Messmann

Robert Hoelzl

Dirk Zemke

Andreas Ehlert

Dawid Kot

Arnold Kuehhorn

Atsuki Matsumura

Ruediger Schmolke

Leonid Gorbunov

Robert Hölzl

Herbert Weidner

Sei Fukushima

Hiroyuki Deai

Claus Kropshofer

Martin Grassl

Martin Wasner

Johannes Studener

Lenoid Gorbunov

Thomas Wetzel

Andris Muiznieks

Rolf Knobel

Robert H&ouml;lzl

Josef Brunner

An induction heating coil melts granules composed of semiconductor material on a plate with an outlet tube. The induction heating coil has a coil body provided with current-guiding slots, the coil body having an upper side and a lower side and having a passage opening for granules in a region of the coil body that lies outside the center of the coil, and current-carrying segments which project from the center of the lower side of the coil body and which are electrically conductively connected by a web at a lower end.

Induction heating coil and method for melting granules composed of semiconductor material

Silicon wafers having an oxygen concentration of 5&#xb7;10to 7.5&#xb7;10cmhave the following BMD densities after the following thermal processes, carried out alternatively:

Silicon wafer and method for producing it

Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate vhaving the units [mm/min]; and the diameter of the single crystal in the section having a diameter that remains constant is regulated to the predefined diameter by regulating the heating power of a first heating source which supplies heat to the single crystal and to a region of the melt that adjoins the single crystal and is arranged above the melt, such that diameter fluctuations are corrected with a period duration T that is not longer than (2&#xb7;18 mm)/v.

Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant

Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.

Method for producing a single crystal composed of silicon by remelting granules

A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

Method for producing a single crystal of semiconductor material

Silicon single crystals are prepared from molten granules, by

Method for producing a single crystal composed of silicon using molten granules

The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:

Epitaxial wafer and production method thereof

Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Semiconductor wafers of silicon and method for their production

A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

Process and apparatus for producing a single crystal of semiconductor material

Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions &#x2267;20 &#x3bc;m below the wafer surface in the range of 5&#xd7;10/cm, and a density of BMDs with sizes of &#x2267;300 nm&#x2266;1&#xd7;10/cm, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.

Silicon wafer for semiconductor and manufacturing method thereof

Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

Method and device for producing semiconductor wafers of silicon

Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

Semiconductor substrate and method for production thereof

Semiconductor wafer of monocrystalline silicon contain fluorine, the fluorine concentration being 1&#xb7;10to 1&#xb7;10atoms/cm, and is free of agglomerated intrinsic point defects whose diameter is greater than or equal to a critical diameter. The semiconductor wafers are produced by providing a melt of silicon which is doped with fluorine, and crystallizing the melt to form a single crystal which contains fluorine within the range of 1&#xb7;10to 1&#xb7;10atoms/cm, at a growth rate at which agglomerated intrinsic point defects having a critical diameter or larger would arise if fluorine were not present or present in too small an amount, and separating semiconductor wafers from the single crystal.

Semiconductor wafer of single crystalline silicon and process for its manufacture

Growing community of inventors

Hochburg/Ach, Austria

Wilfried Von Ammon