Schott Solar Ag

Merck Patent Gmbh

Merck Patent Gesellschaft

Rwe Schott Solar Gmbh

Shott Solar Ag

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Wilfried Schmidt

Ingo Schwirtlich

Berthold Schum

Dieter Franke

Werner Stockum

Sylke Klein

Armin Kübelbeck

Hilmar Von Campe

Henning Nagel

Andreas Teppe

Peter Roth

Tobias Droste

Stefan Dauwe

Gunnar Schubert

Gabriele Blendin

Joerg Horzel

Knut Vaas

Ingrid Ernst

Marco Faber

Jorg Horzel

A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.

Method for producing a dopant profile

A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Method for chemically treating a substrate

A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.

Method for producing a metal contact on a coated semiconductor substrate

Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature Tand keeping the semiconductor element at temperature Tover a time t; sintering the dried material by heating the semiconductor component to a temperature Tand keeping the semiconductor component at temperature Tover a time t; cooling the semiconductor component to a temperature Tthat is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature Tover a time T; cooling the semiconductor component to a temperature Twith T&#x2266;&#x2212;35&#xb0; C. and keeping the semiconductor component at temperature Tover a time T; and heating the semiconductor component to room temperature.

Method for producing electric contacts on a semiconductor component

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.

Combined etching and doping media

The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.

Combined etching and doping substances

The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.

Method for constructing a layer structure on a substrate

Growing community of inventors

Schwaigern, Germany

Wilfried Schmidt