Ii-Vi Delaware, Inc.

Wilfried Maineult

Evgeny Zibik

Jean Axel Edmond Teissier

Ludovic Maurice Emile Marigo

A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

Control of current spread in semiconductor laser devices

A vertical cavity surface emitting laser (VCSEL) may include an active region (e.g., one or more quantum wells) and a chirped pattern reflector. The active region may be configured to be electrically pumped such that the active region generates light having a fundamental mode and a higher order mode. The chirped pattern reflector may include a first portion presenting to the active region as a first portion of an effective mirror having a concave shape and a second portion presenting to the active region as a second portion of the effective mirror having a convex shape.

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Zurich, Switzerland

Wilfried Maineult