Steag Rtp Systems Gmbh

Mattson Technology, Inc

Centrotherm Photovoltaics Ag

Hq-dielectrics Gmbh

Mattson Thermal Products Gmbh

Ast Elektronik Gmbh

Centrotherm Thermal Solutions Gmbh+co.kg

Centrotherm International Ag

Wilfried Lerch

Zsolt Nenyei

Paul Janis Timans

Alexander Gschwandtner

Sing-Pin Tay

Patrick Schmid

Jürgen Niess

J&uuml;rgen Niess

Wilhelm Kegel

Ashok K Sinha

Markus Hauf

Stephen E Savas

Daniel J Devine

Yao Zhi Hu

Bruce W Peuse

Guangcai Xing

Conor Patrick O'Carroll

Helmut Sommer

Thomas Theiler

Manfred Falter

Johann Georg Reichart

Michael Maurer

Uwe Kreiser

Karsten Weber

Jüergen Niess

Georg Roters

Wolfgang Skorupa

Yaozhi Hu

Rudy Cardema

Igor Fidelman

Zsolt Nenyel

Thomas Schumann

Jeff Gelpey

Denise Reichel

Michael Grandy

Olgun Altug

Thomas Graf

Reinhold Obst

Günther Kummer

Hartmut Rick

An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted by the substrate due to its own temperature and radiation emitted by the first radiation, which is reflected at the substrate and at least one of a drive power of the first radiation source and the radiation intensity of the first radiation source.

Device for determining the temperature of a substrate

A substrate holder having a plate element for receiving a substrate includes at least one recess in a first side and spacers in the at least one recess. At least one opening is fluidly connected to the recess and is connectable to an external gas delivery/exhaust unit. At least one notch or channel radially surrounds the recess. At least one opening is fluidly connected to the notch or channel and is connectable to an external gas delivery/exhaust unit. A circumferential web radially surrounds the recess and is located between the recess and the notch or channel. A first circumferential contact surface is formed on the upper side of the web and radially surrounds the recess, such that a substrate abutting against the first contact surface forms an enclosed chamber with the recess. A second circumferential contact surface radially surrounds the notch or channel.

Substrate holder and a device and a method for treating substrates

An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure. Furthermore, a first radiation detector is provided, which is directed directly onto the surface of the substrate facing the grating structure, and a device for determining radiation emitted by the substrate due to its own temperature and for determining the temperature of the substrate on the basis of the radiation detected by the first radiation detector.

A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200&#xb0; C. and an oxide growth is induced on the surface of the substrate facing the plasma.

Method for forming a layer on a substrate at low temperatures

A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (), an electrode () comprising a coaxial inner conductor () made of electrically conductive material and a coaxial outer conductor () made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device () that is connected to the coaxial inner conductor (), characterized in that the coaxial outer conductor () comprises at least one first partial region () in which it completely surrounds the coaxial inner conductor () along the longitudinal axis thereof and comprises at least one further partial region () in which it surrounds the coaxial inner conductor () partially such that microwave radiation generated by the microwave generator () can exit in the at least one further partial region () substantially perpendicular to the longitudinal axis of the coaxial inner conductor ().

Device and method for producing dielectric layers in microwave plasma

Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures

Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Method and system for thermally processing a plurality of wafer-shaped objects

The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Device for thermal treatment of substrates

A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH molecules.

Method for the removing of adsorbed molecules from a chamber

The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.

Adjusting of defect profiles in crystal or crystalline-like structures

A method and apparatus for calibrating temperature measurements that are taken with a first radiation detector for measuring thermal radiation given off by a reference substrate are provided. The method includes the steps of heating the reference substrate, which carries at least one reference material having a known melting point temperature, to or over the melting point temperature and measuring the thermal radiation of the reference substrate during the heating step, during a cooling period that follows the heating, or during both the heating and the cooling periods. The method also includes the step of correlating a measurement plateau of the thermal radiation which occurs during the measuring step with the known melting point temperature.

Method and device for calibrating measurements of temperatures independent of emissivity

A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.

Method for rapid thermal processing (RTP) of silicon substrates

A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength .lambda. having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength .lambda. is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength .lambda., and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength .lambda..

Method and apparatus for determining emissivity of semiconductor material

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Dornstadt, Germany

Wilfried Lerch