Siemens Aktiengesellschaft

Wilfried H{umlaut Over (a)}nsch

Frank Prein

Improved techniques for quantifying proximity effects during fabrication of integrated circuits are disclosed. The improved techniques use active features formed on a semiconductor wafer to quantify proximity effects. According to the improved techniques, a device performance quantity for an active feature is measured, and then a feature length for the active feature is determined in accordance with the measured device performance quantity. The fabrication processing can then be evaluated and/or compensated based on the determined feature length. In one example, the active feature can be a metal-oxide semiconductor (MOS) transistor and the device performance quantity can be current.

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Midlothian, VA, United States of America

Wilfried H{umlaut Over (a)}nsch