Koninklijke Philips Corporation N.V.

U.S. Philips Corporation

Teledyne Dalsa B.v.

Wilco Klaassens

Hermanus L Peek

Willem Hendrik Maes

Pascal J H Bloemen

Gregory Lee Kreider

Hermanus Leonardus Peek

The invention relates to a semiconductor device comprising: i) a substrate () comprising an insulating layer (), wherein the electrically insulating layer () comprises a recess (), and ii) a first conductive wire (). The first conductive wire () comprises a first conductive sub-layer () provided within the recess (), and comprises a second conductive sub-layer () provided on the first conductive sub-layer () forming a shunt for the first conductive sub-layer (), wherein the first conductive sub-layer () comprises tungsten and the second conductive sub-layer () comprises aluminum, wherein the first conductive sub-layer () and the second conductive sub-layer () are substantially planar, and wherein the second conductive sub-layer () has substantially the same pattern as the first conductive sub-layer (). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology. This advantage is particularly useful in high-speed and/or high resolution image sensors.

Semiconductor device and method of manufacturing such semiconductor device

The image sensor comprises a semiconductor body ( ) having gate electrodes ( ) at a surface ( ), each gate electrode being combined with the semiconductor body ( ) and an intermediate dielectric ( ) so as to form a MOS capacitor ( ), which gate electrodes ( ) include a portion ( ) which is thinner than a surrounding zone ( ), a photosensitive region ( ) in the semiconductor body ( ) being situated below each gate electrode ( ), said photosensitive region ( ) being capable of absorbing electromagnetic radiation and converting said radiation to electric charge. The MOS capacitors ( ) are arranged next to each other so as to form an array ( ), with the gate electrodes ( ) in a row ( ) electrically contacting each other, and the gate electrodes ( ) in a column ( ) being mutually separated only by electrically insulating material ( ). The image sensor has an improved photosensitivity, particularly for electromagnetic radiation with a short wavelength.

Image sensor and method of manufacturing same

In a method of manufacturing a multilayer film consisting of a stack of primary soft-magnetic layers and secondary non-magnetic layers on a substrate by way of reactive sputtering, use is made of one type of target at least as regards composition for alternately depositing a primary and a secondary layer, which target is particularly made of an FeHf alloy. For performing a sputtering process, use is preferably made of a gas mixture of Ar and O,in which the quantity of O,in the gas mixture is controllable and is smaller for sputtering the soft-magnetic layers than for sputtering the non-magnetic layers.

Method of manufacturing a multilayer film

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Eindhoven, Netherlands

Wilco Klaassens