Asm IP Holding B.v.

Wilco A Verweij

Dieter Pierreux

Bert Jongbloed

Steven Van Aerde

Kelly Houben

Werner Knaepen

Anna Trovato

A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500&#xb0; C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600&#xb0; C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

Method for forming a layer provided with silicon

Method for providing a semiconductor device with silicon filled gaps

Growing community of inventors

Nijkerk, Netherlands

Wilco A Verweij