Lsi Logic Corporation

Wilbur C Catabay

Ming-Yi Lee

Kaijun Leo Zhang

Gaseous reactants capable of depositing a thin film on a semiconductor substrate are introduced into a deposition zone of a deposition apparatus through a gaseous reactants dispersion apparatus having rounded corners and smoothed anodized surfaces and maintained at a temperature ranging from about 70.degree. C. to about 85.degree. C., and preferably from about 75.degree. C. to about 80.degree. C., to inhibit the deposition and accumulation on such surfaces of charged materials capable of generating particles which may cause damage to the semiconductor substrate.

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Saratoga, CA, United States of America

Wilbur C Catabay