Texas Instruments Corporation

Other

Woodland International Corporation

Wilbur A Porter

Jack S Kilby

Donald L Parker

Jay W Lathrop

William R McKee

Robert C Rogers

James C Fletcher

An areal array of tubular electron sources is disclosed for producing multiple directed electron beams. Sources (10) are located in a parallel array between a conductive back plate (12) at a closed end of the tubes and a conductive face plate (14) having holes therein aligned with the second open end of each of the electrode tubes (10). An electrical current source (30) is connected between the back plate (12) and face plate (14) to resistively heat each of the sources (10) to a temperature high enough for thermionic electron emission. Electron beams (34) are produced from within each of the tubular electrodes (10). Extraction means which may include a magnetic field from a coil (29) and an extraction lens (18) tends to withdraw the electrons from within the sources (10) in an intense, collimated beam (34). Beams (34) are accelerated toward a target (28) through a beam deflection unit (22) having holes (24) associated with each of the electron beams (34 ). Beam deflection plates (26) within each of the holes (24) deflect the electron beams (34) to impact selected points on a target (28).

Method of using an areal array of tubular electron sources

Areal array of tubular electron sources

A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.

Fabrication process for semiconductor bodies

System for fabrication of semiconductor bodies

A process for the manufacture of a light energy converter involves forming of a plurality of photovoltaic sources wherein first bodies of a first conductivity type semiconductor material each has a surface layer of a second conductivity type material and second bodies of said second conductivity type semiconductor material each has a surface layer of said first conductivity type material. The first and second bodies are intermingled in a one level layer in an insulating support. A conductive layer is applied to interconnect the first conductivity type material of all said first bodies with the second conductivity type material of all said second bodies. An electrolyte may wet such sources where, upon exposure to light, the sources cause a current to flow in the electrolyte producing an electrochemical reaction. The products of this reaction where the electrolyte is a solution such as aqueous hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.

Light energy conversion

Solar energy conversion is provided by a structure formed of a plurality of photovoltaic sources. An electrolyte wets the sources. Upon exposure to light the photovoltaic sources cause a current to flow in the electrolyte, producing an electrochemical reaction. The products of this reaction are collected and stored. In a preferred embodiment the electrolyte is an aqueous solution of hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.

An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing x-ray diffraction techniques. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vaccum chuck provided for an x-ray camera while the entire surface thereof is illuminated simultaneously by a beam of incident x-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the wafer.

Apparatus for use in examining the lattice of a semiconductor wafer by

Solar energy conversion is provided by a structure formed of a plurality of photovoltaic sources. An electrolyte wets the sources. Upon exposure to light the photovoltaic sources cause a current to flow in the electrolyte producing an electrochemical reaction. The products of this reaction may then be collected and stored. In a preferred embodiment the electrolyte is an aqueous solution of hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.

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College Station, TX, United States of America

Wilbur A Porter