Samsung Electronics Co., Ltd.

Yonsei University

Whan-Kyun Kim

Woo-Jin Kim

Young-Man Jang

Jun-Ho Jeong

Deok-Hyeon Kang

Yong-Sung Park

Se-Chung Oh

Kee-won Kim

Kwang-seok Kim

Young-Hyun Kim

Joon-Myoung Lee

Sang-hwan Park

Woo-Chang Lim

Jae-young Choi

Hyeon-jin Shin

Woo-chang Lim

Seong-chan Jun

Hyung-seo Yoon

Ju-yeong Oh

Ju-hwan Lim

A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Magnetoresistive random access memory (MRAM) device

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

Substrate processing apparatus

Method of manufacturing a magnetoresistive random access memory device

Substrate processing apparatus and method for manufacturing semiconductor device using the same

A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Method of manufacturing magnetoresistive random access memory device

Magnetoresistive random access memory device and method of manufacturing the same

A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.

High frequency circuit comprising graphene and method of operating the same

A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.

Method for fabricating nonvolatile memory device

A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.

Non-volatile memory devices and methods of fabricating the same

Growing community of inventors

Seoul, South Korea

Whan-Kyun Kim