Novellus Systems Incorporated

Seastar Chemicals Ulc

Wesley P Graff

Rajesh Odedra

Cunhai Dong

Diana Fabulyak

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R&#x2014;Sn-A, wherein: 

Organometallic compounds and purification of such organometallic compounds

A method of etching or removing an organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the organic hardmask with the plasma, with the organic hardmask being at a temperature in excess of 200&#xb0; C., to remove the organic hardmask without substantially harming the underlying substrate.

Method for etching organic hardmasks

A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the amorphous carbon organic hardmask with the plasma, with the amorphous carbon organic hardmask being at a temperature in excess of 200&#xb0; C., to remove the amorphous carbon organic hardmask without substantially harming the underlying substrate.

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Singapore, Singapore

Wesley P Graff