Taiwan Semiconductor Manufacturing Comp. Ltd.

Wesley Lin

Jhon-Jhy Liaw

Chia-Fu Lee

Fang-Shi Jordan Lai

Jhon Jhy Liaw

Ping-Wei Wang

Tsung-Lin Lee

Chii-Ming M Wu

Harry Chuang

Chang-Yun Chang

Ren-Fen Tsui

Chao-Hsiang Yang

Tang-Xuan Zhong

Sung-Chun Hsieh

Shiun-Huan Lai

Jiing-Shin Shyu

Ming-Hsin Li

Sheng Chi Lin

Fang-Shi Jorcan Lai

Charles Chen

Jeng-Long Huang

Chii-Ming W Wu

Jacky Lin

Hsien-Ying Tseng

Ging-Fang Yen

An on-demand data management system. The system comprises a file management module and a demand analysis module. The file management module receives files. Each file has attributes. The file management module segments the files according the attributes. The demand analysis module receives a data demand and selects data from the segmented files according to the data demand.

On-demand data management system and method

The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.

Connection structure for semiconductor devices

A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.

Static noise-immune SRAM cells

A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.

Circuit implementation of a dynamic power supply for SRAM core array

The present invention discloses a memory device with a leakage current reduction feature. The memory device includes at least one memory cell for storing a value, and at least one switch module coupled to the memory cell for generating an operating voltage at various levels depending on various operation modes of the memory cell. The operating voltage is at a first level when the memory cell is being accessed, and is at a second level lower than the first level when the memory cell is not being accessed, thereby reducing a leakage current for the memory cell.

SRAM device with reduced leakage current

A fuse structure for a semiconductor device on a substrate includes a fuse having an electrically conductive fuse line of a standard fuse length formed in an electrically conductive layer disposed over the substrate, and a pair of electrically conductive, inwardly bent interconnects formed in a first plurality of electrically conductive layers disposed over the substrate, below the electrically conductive layer in which the fuse line is formed. The inwardly bent interconnects couple the fuse line to a circuit area of the substrate disposed under the fuse line. The fuse structure may further include a protective guard ring formed around the fuse. The guard ring includes a second plurality of electrically conductive interconnects.

Metal fuse structure for saving layout area

A memory device includes a number of memory cells arranged in rows and columns. Each memory cell is coupled to a wordline and at least one bitline and/or Each bitline ( ) is coupled to a sense amplifier which is enabled by a sense amplifier enable circuit The sense amplifier enable circuit is coupled to the dummy bitline. This circuit provides the enable signal at a time based on an amount of leakage voltage determined from the dummy bitline.

Apparatus for cleaning a substrate

Growing community of inventors

Hsin-Chu, Taiwan

Wesley Lin