Northrop Corporation

Wesley J Thompson

John W Tully

James M Rowe

Paul Kraatz

Rudolph W Modster

V Warren Biricik

Vahram W Biricik

Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.

Method of manufacture of optically transparent electrically conductive

A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed with a substrate of semi-conductor material which has a conduction modifying dopant diffused, grown or deposited on one surface thereof to a substantial depth so that a layer thereof exhibits reduced resistance to a value below 10 ohms/square. Anti-reflection dielectric layers are stacked on both outer surfaces thereof. The dielectric substrate may be of silicon, germanium or gallium arsenide depending on the transparency bandwidth of interest. The thickness of the substrate and the doping of the surface thereof is closely controlled to obtain both low electrical resistivity and high optical transmissivity.

Optically transparent electrically conductive semiconductor windows and

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Torrance, CA, United States of America

Wesley J Thompson