Temic Telefunken Microelectronic Gmbh

Vishy Semiconductor Gmbh

Werner Zurek

Klaus Graff

Franz Mathe

A substrate layer is provided at the rear side of a single semiconductor element. An active layer is arranged between the substrate layer and a contact side of the single semiconductor element. At least two solder contacts are electrically connected to the active layer and project beyond the contact side in order to make possible a direct soldering of the single semiconductor element to a carrier board. The contact side is provided with a glass passivation layer. Alternatively or additionally to this, at least one side face of the single semiconductor element is provided with an insulator layer in order to avoid short circuits on the soldering of the single semiconductor element to the carrier board. It is furthermore possible for the solder contacts to have different outlines at the contact side.

Single semiconductor element in a flip chip construction

A method is described for manufacturing semiconductor components with short switching time, having a weakly doped semiconductor area in contact with a PN junction. In order to obtain an inhomogeneous impurity distribution in the axial direction of the semiconductor array, the following process steps are implemented: a) gold impurities are placed in the semiconductor array and homogeneously distributed there in a first diffusion process, b) a layer comprising a 3d transition metal affecting the charge carrier lifetime is deposited onto that surface side of the semiconductor array having a shorter distance from the weakly doped semiconductor area, c) the 3d transition metal is incorporated into the semiconductor array by a second diffusion process and is inhomogeneously distributed there, such that an impurity surplus is generated in a partial area of the weakly doped semiconductor area in the vicinity of the PN junction.

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Lauffen, Germany

Werner Zurek