Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Wacker Siltronik Gesellschaft Fur Halbleitermaterialien Ag

Werner Zulehner

Rudolf Griesshammer

Wilfried Von Ammon

Anton Schnegg

Erich Tomzig

Dietrich Schmidt

Heinz-Jorg Rath

Winfried Lang

Michael Schwab

Leonid Gorbunov

Yu M Gelfgat

Peter Hahn

Hubert Piontek

A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.

Process and apparatus for the growth of single crystals

Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.

Silicon wafers for producing oxide layers of high breakdown strength and

A method is described according to which articles of quartz glass, particrly quartz crucibles for use in crucible pulling according to Czochralski of high-purity synthetic quartz glass can be produced. High-purity silicon tetrachloride is hydrolized with water. The hydrolysis product is separated, dried, shaped, sintered and superficially fused.

Method for producing articles of high-purity synthetic quartz glass

In the crucible pulling of silicon according to the Czochralski technique, ilicon monoxide forms as a result of the silicon melt reacting with the quartz crucible containing the melt, and evaporates and deposits in the form of solid particles on the upper edge of the crucible, on the monocrystalline rod, on the walls of the vessel, and also on recharging devices in the upper pulling chamber. These solid particles can fall back into the melt and then cause dislocations and polycrystalline growth in the growing silicon rod. As a result of the reaction of the carbon of the hot graphite parts with silicon monoxide, carbon monoxide is also formed and this partially diffuses into the melt and gives rise to carbon impurities in the silicon rod. In addition, because of heat irradiation from the inner wall of the quartz crucible as it becomes more empty, high pulling speeds, such as those usual in crucible-free zone pulling, cannot be obtained. These disadvantages of the conventional crucible-pulling process are effectively obviated according to the invention by a pot-like device which entails a partial covering of the melt surface, the crucible and the space laterally adjoining the crucible.

Device and process for pulling high-purity semiconductor rods from a melt

A process for making crucible-drawn silicon rods containing volatile doping gents, especially antimony, said rods having narrow resistance tolerances, which comprises drawing from a pre-doped silicon melt a monocrystalline rod while passing through the melt a current of inert gas either intermittently or continuously.

Process for producing crucible-drawn silicon rods containing volatile

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Emmerting, Germany

Werner Zulehner