Tel Solar Ag

Oerlikon Solar Ag, Truebbach

Oc Oerlikon Blazers Ag

Oerlikon Solar Ag, Trubbach

Werner Wieland

Christoph Ellert

Arthur Buechel

Laurent Sansonnens

Daniele Zorzi

Abed Al Hay Taha

A plasma reactor () for treating a substrate (), comprises at least two electrodes () arranged within the reactor () defining an internal process space () there between, whereas the two electrodes () are located opposed to each other and parallel with respect to a first surface () of the electrodes (). Further it comprises a gas inlet () and a gas outlet () for transporting gas in and out of the plasma reactor (), a radiofrequency generator () connected to at least one of the electrodes (). At least one of the electrodes () has a corrective layer having a non planar shape along a surface () facing the internal process space () which has in a first cross section along a radius of the electrode () a profile comprising three consecutive and adjacent segments, namely a first, a second and a third segment, where the third segment is adjacent to an edge of the electrode () and whereas medium gradient in the first segment is less than a medium gradient in the second segment and a medium gradient in the second segment is larger than a medium gradient in the third segment. An electrode () shaped in the above described manner provides for uniform plasma intensity along the surface of the substrate () and therefore provides for a treating which is homogenous and features uniform thickness. This invention further allows a compact construction of the vacuum treatment apparatus ().

Deposition of active films

A vacuum treatment installation has a vacuum receptacle with a first planar metallic electrode face, a second dielectric electrode face facing the first planar metallic electrode face which forms a surface of a dielectric areal configuration, a metallic coupling face facing a backside of the areal configuration, electric connections on the coupling and on the first electrode face, a gas line system through the coupling face and an areal distributed pattern of apertures through the areal configuration and wherein the areal dielectric configuration is formed by several ceramic tiles.

Vacuum treatment installation for the production of a disk-shaped workpiece based on a dielectric substrate

A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One electrode face is of dielectric material and is at a high-frequency potential with a varying distribution along the face. The other electrode face is metallic. Reactive gas is introduced into the process volume through an aperture pattern. The dielectric substrate, before treatment, is at least regionally coated with a layer material to whose specific resistanceapplies: 10&#x3a9;cm&#x2266;&#x2266;10&#x3a9;cm, and to the resulting surface resistance Rof the layer applies: 0&#x3c;R&#x2266;10&#x3a9;. Subsequently, the coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.

Method for manufacturing a plate-shaped workpiece

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Malans, Switzerland

Werner Wieland