Merck Patent Gmbh

Merck Patent Gesellschaft

Basf Se Corporation

Werner Stockum

Ingo Koehler

Armin Kuebelbeck

Sylke Klein

Oliver Doll

Armin Kübelbeck

Arjan Meijer

Berthold Schum

Wilfried Schmidt

Jun Nakanowatari

Christian Matuschek

Mark James

Lilia Heider

Paul Craig Brookes

Katsumi Tanino

Sebastian Barth

Claudia Zielinski

Kiyohiko Kawamoto

Katie Patterson

Claudia Wiegand

Armin K&uuml;belbeck

Charlotte Lindhardt

The present invention relates to aluminium oxide pastes and to a process for the use of the aluminium oxide pastes for the formation of AlOcoatings or mixed AlOhybrid layers.

Aluminium oxide pastes and process for the use thereof

The present invention refers to a method for selectively structuring of a polymer matrix comprising AgNW (silver nano wires) or CNTs (carbon nano tubes) or comprising mixtures of AgNW and CNTs on a flexible plastic substructure or solid glass sheet. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.

Selective etching of a matrix comprising silver nano wires

The present invention relates to a method for producing solar cells with local back surface field (LBSF) using an alkaline etching paste which allows the back surface to be polished and the back surface edges to be insulated in a single process step.

Process for the production of solar cells having a local back surface field (LBSF)

The present invention relates to a method for selectively etching and patterning with high resolution of flexible polymer matrices, which may comprise Ag nano tubes.

Selectively etching of a polymer matrix on pet

The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.

Selectively etching of a carbon nano tubes (CNT) polymer matrix on a plastic substructure

The present invention relates to novel printable etching media having improved properties for use in the process for the production of solar cells. These are corresponding particle-containing compositions by means of which extremely fine lines and structures can be etched very selectively without damaging or attacking adjacent areas.

Printable medium for etching oxidic, transparent and conductive layers

The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers.

Process for the production of solar cells comprising a selective emitter

The invention relates to novel etching media in the form of etching pastes for etching selected areas or the entire area of silicon surfaces and layers, in addition to the use of said media.

Etching pastes for silicon surfaces and layers

The present invention relates to compositions, which are useful for the generation of patterned or structured SiO-layers or of SiO-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.

[object Object]

To provide functional paste with etching activity and good electrical properties. Functional paste comprising a metal powder, an etching agent, a binder and an organic solvent.

Functional paste

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.

Combined etching and doping media

The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

Printable etching media for silicon dioxide and silicon nitride layers

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in which these media are employed.

Combined etching and doping media for silicon dioxide layers and underlying silicon

The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells and to the use thereof. In particular, the invention relates to corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

Printable medium for the etching of silicon dioxide and silicon nitride layers

The present invention relates to a novel etching medium for the structuring of transparent, conductive layers, as are used, for example, in the production of liquid-crystal displays (LCDS) using flat-panel screens or of organic light-emitting displays (OLEDs) or in thin-film solar cells. Specifically, it relates to particle-free compositions by means of which fine structures can be etched selectively in oxidic, transparent and conductive layers without damaging or attacking adjacent areas. The novel liquid etching medium can advantageously be applied by means of printing processes to the oxidic, transparent, conductive layers to be structured. Subsequent heat treatment accelerates or initiates the etching process.

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Reinheim, Germany

Werner Stockum