Osram Gmbh

Osram Opto Semiconductors Gmbh

Werner Späth

Günter Waitl

Werner Marchl

Wolfgang Gramann

Johann Luft

Bruno Acklin

Georg Bogner

Stefan Grötsch

Stephan Lutgen

Tony Albrecht

Martin Rudolf Behringer

Norbert Linder

Ulrich Steegmüller

Patrick Kromotis

Raimund Oberschmid

Karl-Heinz Schlereth

Karl Joachim Ebeling

Christian Hanke

Zeljko Spika

Wolfgang Teich

Rüdiger Müller

Jörg Heerlein

Lutz Korte

A configuration of multiple LED modules comprising a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer, wherein the first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Configuration of multiple LED modules

An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelengths during operation, so that the LED module is suitable for generating mixed-color light, and in particular for generating white light.

LED module

A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses () disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density.

Radiation source and method for producing a lens mould

A white light source has a light emission device, in particular an IR laser diode, whose emitted radiation beam is converted, in a nonlinear-optical element and a conversion element, into a radiation beam with wavelengths &#x3bb;, . . . &#x3bb;which can be perceived as white light and can have a higher power rating.

White light source based on nonlinear-optical processes

A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

Array with light-emitting power semiconductor component and corresponding production method

A measuring arrangement for measuring product parameters of a component in the epitaxial layer () of a wafer comprises measuring probe () on whose contact side () a recess () is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (), which is charged with a signal from a pulsed-current source, and the surface () of the wafer (). A detector () serves for detecting the light which is emitted by the component.

Method for measuring product parameters of components formed on a wafer and device for performing the method

In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

Optically pumpable surface-emitting semiconductor laser device

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

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Holzkirchen, Germany

Werner Späth