Siemens Aktiengesellschaft

Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Ag

Werner Spath

Hans-Ludwig Althaus

Wolfgang Gramann

Werner Kuhlmann

Werner Marchl

Herbert Brunner

Norbert Linder

Norbert Stath

Wolfgang Reill

Ernst Nirschl

Gunther Waitl

A configuration of multiple LED modules having a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer. The first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Configuration of multiple LED module

An electroluminescent component (), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component () has a substrate (); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate () and having an active layer stack () with an emission zone (); and a contact element () on each radiation decoupling element (). The contact elements (), whose width (b') is dimensioned such that it is less than the width (b) of the radiation decoupling elements (), are arranged centrally on the radiation decoupling elements (), and the width (b) of the radiation decoupling elements (), for a given height (h), is chosen to be so small that a substantial proportion of the light () radiated laterally from the emission zone () can be decoupled directly through the side areas () of the radiation decoupling elements ().

Electroluminescent body

An optoelectronic sensor module is provided for recognition of reflection patterns on a magnetic data carrier. A laser component having a laser radiation axis, at least a first sensor photodetector laterally displaced relative to the laser radiation axis, electrically conducting bond pads and mutually electrically insulated conducting paths, are disposed on or in a silicon submount or cooling element. A lens configuration which is provided at a side of the laser emitter component opposite the cooling element, is fixed on the cooling element by at least one supporting web.

Optoelectronic sensor module

An optoelectronic module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.

Optoelectronic module for bidirectional optical data transmission

An optoelectronic transmitting and/or receiving module for signal transmission through the use of an optical waveguide, includes an optoelectronic transmitting and receiving unit disposed in a housing having a support plate, a covering cap and a window. The covering cap has an optical waveguide connection device which is constructed in such a way that the optical waveguide connection device can be adjusted with respect to the optoelectronic unit prior to final fixing. A method for producing the optoelectronic transmitting and/or receiving module is also provided.

Optoelectronic transmitting and/or receiving module and method for its

An immersion system for a magneto-optical storage device has a spherical-segment-shaped lens. The lens is formed of material that is transparent to the electromagnetic radiation of the wavelength .lambda. at which the device is operated, and preferably of a semiconductor material. The lens has a first refractive index n.sub.1 which is greater than that of air. A layer with a higher refractive index than the lens is disposed in the propagation path of the electromagnetic radiation. The layer is composed of a material with a second refractive index n.sub.2 that is greater than the first refractive index n.sub.1 of the material of the lens.

Solid immersion lens with semiconductor material to achieve high

An LED device includes at least one LED chip having a front contact metallization disposed on a light exit surface of a light-emitting member and a rear contact metallization disposed on a side of the light-emitting member opposite the light exit surface. The LED chip is disposed between first and second conductor track supports. The first conductor track support is transparent and has at least one first electric conductor contacting the front contact metallization. The second conductor track support has at least one second electric conductor contacting the rear contact metallization. The LED device has, inter alia, the special advantage of permitting the size of the LED chips to be reduced, in contrast with the chip size in conventional LED devices, thus allowing the luminous spot density to be increased.

Led device

A method is provided for producing at least one beam splitter molded part from transparent material in which a beam splitter layer is embedded. Two radiation-transparent wafers, of which one is provided with a beam splitter layer, are interconnected in such a way that the beam splitter layer lies between the two wafers. Subsequently, this wafer assembly is further processed to form individual prism ingots, for example by sawing them through into wafer strips and grinding or polishing lateral surfaces, or by profile sawing. An optoelectronic module for bidirectional optical data transmission uses the beam splitter molded part.

Method for producing a beam splitter molded part and optoelectronic

An integrated semiconductor circuit has a component formed of a semiconductor substrate with an active pn junction formed between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The semiconductor circuit also has a protective circuit that is associated with the component and serves to dissipate overvoltages and/or electrostatic charges. The protective circuit has a protective pn junction formed in a semiconductor mount with a first semiconductor mount region of the first conductivity type and a second semiconductor mount region of the second conductivity type. The second semiconductor mount region of the second conductivity type is electrically coupled to the first semiconductor region formed in the semiconductor substrate of the first conductivity type.

Integrated semiconductor circuit

An optoelectronic transducer configuration has a radiation-emitting and/or receiving semiconductor component fastened to a carrier plate in such a way that its beam exit/entry face is directed towards the carrier plate. The carrier plate is composed of a material which is transparent to the radiation. A device for focusing the radiation is additionally disposed on the carrier plate. The optoelectronic transducer is distinguished in particular by low reflection losses and simple mounting. A multiplicity of such transducers can be fabricated as a unit and then separated.

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Holzkirchen, Germany

Werner Spath