Siemens Aktiengesellschaft

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Simens Aktiengesellschaft

Werner Spaeth

Werner Kuhlmann

Hans-Ludwig Althaus

Ralf Dietrich

Georg Bogner

Stefan Groetsch

Wolfgang Gramann

Ernst Nirschl

Hans Ludwig Althaus

Norbert Stath

Guenther Waitl

Karl Osojnik

Herbert Brunner

Hans Opower

Walter Wegleiter

Hartmut Schneider

Axel Schubert

Johann Luft

Bruno Acklin

Herbert Schaefer

Gerhard Krause

Klaus Panzer

Heinz Haas

Uwe Brauch

Markus Wicke

Guenter Waitl

Joachim Melbert

Holger Karstensen

Alfred Hartl

Helmut Haltenorth

Detlef Haberland

Erich Hufgard

Michael Langenwalter

Franz Mayerhofer

Gerald Neumann

Rudolf Buchberger

Lothar Spaeter

Wolf Jakowetz

Rolf Birkmann

Karl Fischer

Marcus Scholl

Joerg Klann

Wolfgang Teich

Waltraud Klos

Norbert Bissinger

Alois Karl

Michael Besand

Ralf Moser

Laszlo Bacs

Bernd Seibert

Hans G Rosen

Guido Hergenhan

Bernd Luecke

A laser radiation source is provided with an array of N individual slave laser diodes in a predetermined surface area. Adjustable power supply networks enable adjustment of the slave laser diodes relative to one another for operation in a stable manner. The slave power supply has a separate power supply network for each slave laser diode. Each of the power supply networks can be adjusted with respect to the current supplied to the respective slave laser diode during a certain operating period. This enables adjusting the slave laser diodes relative to one another. The power supply networks can be connected in parallel and supplied by a common source.

Laser radiation source and process for generating a coherent total laser radiation field

A laser component with a laser array and an optical device for shaping the laser beams emitted by the laser array. The optical device comprises a deflection mirror element following the laser array in the beam direction that simultaneously deflects the individual laser beams of the emitted laser array beam from the radiation direction with respectively the same rotational sense parallel to the common plane and perpendicular thereto. The deflection mirror element is composed of a step-shaped light waveguide stack.

Laser component with a laser array and method for manufacturing the component

Process for the production of a waveguide beam converter for shaping a laser beam collection. A plurality of waveguides are produced and arranged in such a way that at least one individual laser beam can be injected into each waveguide. The waveguides are firstly produced on a substrate using planar technology, and subsequently detached from the substrate over a part of their length, starting from their beam exit ends. The free ends are then arranged and fixed in accordance with an intended output beam arrangement of the output laser beam collection.

Process for the production of a waveguide beam converter

An optoelectronic module for bidirectional optical data transmission includes a molded part acting as a beam-splitter device, formed substantially of a material transparent to emitted radiation and received radiation and having a beam-splitter layer embedded therein. A transmit component, a receive component and a radiation-focusing device are directly connected to the molded part and are provided with a sealing jacket.

Optoelectronic module for bidirectional optical data transmission

An optical switch includes an optical transmission path having an optical transmission medium, an input-side end and an output-side end. A radiation source is associated with the input-side end for emitting a primary optoelectronic signal being coupled into the transmission path. A reflection device is associated with the output-side end for receiving the primary optoelectronic signal and converting the primary optoelectronic signal into a secondary, modulated optoelectronic signal being reflected and coupled back into the transmission path. A receiver is associated with the input-side end of the transmission path for responding to the secondary, modulated optoelectronic signal to perform an electronic switching operation.

Optical switch

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

Radiation emitter component

An optoelectronic transducer includes a base plate, a radiation-emitting or transmitting semiconductor component disposed on the base plate, an optical lens system aimed at the semiconductor component and a spacer joined to the base plate for the lens system. The base plate, the spacer and the lens system are formed of materials with at least similar coefficients of thermal expansion. A method for producing an optoelectronic transducer includes forming indentations in a base plate for receiving semiconductor components, while leaving a land remaining on at least one side of each of the indentations. A first plate of the size of the base plate is placed on the lands and joined to the lands by material locking. The first plate is removed between the lands producing spacers joined to the base plate. A number of the semiconductor components are inserted into the indentations in accordance with a predetermined grid pattern and are joined to the base plate to form substrates. The substrates are covered with a second plate including a number of lens systems correspopnding to number of semiconductor components, while placing the lens systems of the second plate in the same grid pattern. The second plate is adjusted relative to the substrates for aiming each of the lens systems at a respective one of the semiconductor components. The second plate is secured to the substrates.

Optoelectronic transducer formed of a semiconductor component and a lens

A method for manufacturing a semiconductor component having a semiconductor body secured to a support plate comprises securing the support plate on a surface of the semiconductor body before applying the cover layers which form mirrors on the end surfaces of the semiconductor body. The support plate is preferably made of an electrically and thermally conducting material which has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor body.

Applying semiconductor laser mirror layers after securing support plate

In an optoelectronic component having a laser chip as a light transmitter and a lens coupling optics for defined emission of radiation generated in the laser chip, the lens coupling optics is arranged immediately in front of the laser chip and is adjusted and fixed in stable fashion in a simple way. The component is rationally manufactured in a wafer union. The laser chip is arranged on a common carrier between two carrier parts whose lateral surfaces neighboring the resonator faces of the laser chip are provided with mirror layers, and that are inclined at an angle of 45.degree. relative to the resonator faces. Thus the radiation generated in the laser chip is directed nearly perpendicularly upward to the surface of the common carrier and the lens coupling optics is arranged on at least the one carrier part such that the radiation generated in the laser chip impinges this lens optics nearly perpendicularly.

Optoelectronic component and method for the manufacture thereof

A semiconductor component has at least one semiconductor chip mounted on a carrier part of its housing. The semiconductor chip is electrically connected to at least two electrode connectors which are provided with contacts. The component housing has an upper housing portion and at least one housing side part which surround the semiconductor chip at least partially. The carrier part on which the semiconductor chip is mounted forms the upper housing portion of the component housing and the at least two electrode connectors at least partially form the housing side parts of the component housing.

Semiconductor component

A laser diode component includes a semiconductor body secured on a heat sink which includes a dissipator and an electrically and thermally conductive connection plate. The semiconductor body is secured to the connection plate, which in turn is applied to the dissipator. The connection plate is formed of a material having a coefficient of thermal expansion that is similar to the coefficient of thermal expansion of the semiconductor material of the semiconductor body. A connecting layer between the semiconductor body and the connection plate is preferably formed of hard solder. The dissipator is secured to the connection plate, for example through the use of a thermally conductive adhesive. A method for producing a plurality of laser diode components includes making many such laser diode components as a unit, and then subsequently cutting them apart.

Laser diode component with heat sink and method of producing a plurality

The microoptical device has beam-parallelizing optics and a deflecting mirror configuration. The device converts a laser beam bundle, which is emitted by a laser diode strip structure or individual diode chips and which is comprised of a plurality of strip-shaped individual laser beams, into a rectangular or parallelogram-shaped laser beam bundle composed of parallelized strip-shaped individual laser beams arranged parallel next to one another. The beam-parallelizing optics may be a cylindrical lens, and the deflecting mirror configuration may be two rows of mirrors. The cylindrical lens and the rows of mirrors are preferably produced from a semiconductor material and they can therefore be produced cost effectively by means of methods used in semiconductor process engineering.

Microoptical device with mirrors

An optical coupling device and method for manufacturing the same is disclosed wherein a light-emitting semiconductor transmitter chip is secured to a light-detecting semiconductor receiver chip via a transparent insulating layer, a structured spacer layer and a transparent connecting layer. The resultant optocoupler has a high coupling factor and may be reliably manufactured into SMT compatible packages.

Optical coupling device and method for manufacturing the same

A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

Gallium phosphate light emitting diode with zinc-doped contact

A bidirectional transceiver module for message and signal transmission via a light waveguide is formed of a lens coupling optics, a laser chip as a light transmitter, a light receiver, and a beam splitter intervening in the beam path. These parts are at least partially surrounded by a housing. They are designed such that, given reduced manufacturing expense, a lens coupling optics arranged immediately in front of the laser chip can be adjusted in a simple way and can be fixed in stable fashion. The laser chip is arranged on a common carrier between two carrier parts whose lateral surfaces neighboring the resonator faces of the laser chip are provided with mirror layers and are inclined at an angle of approximately 45.degree. relative to the resonator faces for beam deflection onto the lens coupling optics secured above the laser chip on at least one carrier part. The mirror layer neighboring the front side of the laser chip is provided with the beam splitter. The light receiver or an optical coupling for this is provided at the underside of the common carrier.

Transmission and reception module for a bidirectional, optical message

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Holzkirchen, Germany

Werner Spaeth