Qunano Ab

Btg International Limited

Werner Seifert

Lars Samuelson

Damir Asoli

Zhaoxia Bi

Jonas Ohlsson

Björn Jonas Ohlsson

Lars Magnus Borgström

Thomas Mårtensson

Anders Mikkelsen

Bernhard Mandl

A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.

Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Nitride nanowires and method of producing such

Device with nitride nanowires having a shell layer and a continuous layer

The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Method for metal-free synthesis of epitaxial semiconductor nanowires on si

Method of producing nitride nanowires with different core and shell V/III flow ratios

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, &#x3c;001&#x3e; III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential &#x3c;111&#x3e;B direction. As one example, &#x3c;001&#x3e; InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Directionally controlled growth of nanowhiskers

A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S&#x2014;K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.

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Sebnitz, Germany

Werner Seifert