Siltronic Ag

Werner Schachinger

Dieter Knerer

Martin Weber

Walter Heuwieser

Piotr Filar

Masamichi Ookubo

Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM;

Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline

A ring-shaped resistance heater for supplying heat to a growing single crystal, contains an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of one ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings; connecting elements which hold the upper and lower rings together in a spaced apart relationship; and current leads for conducting electric current through the upper and lower rings.

Ring-shaped resistance heater for supplying heat to a growing single crystal

Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.

Growing community of inventors

Simbach, Germany

Werner Schachinger