Osram Opto Semiconductors Gmbh

Infineon Technologies Ag

Finisar Corporation

Osram Opto Semiconductor Gmbh Co. Ohg

Werner Kuhlmann

Melanie Ring

Benjamin Prodinger

Klaus Streubel

Oliver Stier

Arndt Jaeger

Daniel Reznik

Peter Stauss

Michael Schumann

Christian Müller

Thomas Hoefer

Nicola Iwanowski

A surface-mountable device () is specified, having a mounting side (), a top side () lying opposite the mounting side (), an electrically insulating carrier plate (), an electrical component () and a housing (). The carrier plate () terminates the device () toward the mounting side (). Furthermore, the carrier plate () has a fixing side () lying opposite the mounting side (). For the purpose of making electrical contact with the component (), the carrier plate () has conductor tracks () arranged on the fixing side (), contact areas () arranged on the mounting side (), and openings (), wherein in each case a contact area () is electrically conductively connected to a conductor track () by an opening (). The component () is enclosed by the housing (), wherein at least one opening () is arranged below the component (). The housing () and the carrier plate () are arranged flush with one another in a plan view of the carrier plate (). Furthermore, the housing () terminates the device () toward the top side ().

Surface mountable device

A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 &#x3bc;m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

Radiation-receiving semiconductor component and optoelectronic device

A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Radiation detector

A detector system with a microelectronic semiconductor chip and a separate optoelectronic detector chip is specified, wherein the detector chip is positioned on the semiconductor chip. A detector subassembly with such a detector system is also specified.

Detector system and detector subassembly

An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer are made from a Ti/TiN layer (), applied to an aluminum contact surface () of the silicon support (), by means of a deposition method. The aluminum contact surface () is located on a landing pad () on the silicon support ().

Mounting and adhesive layer for semiconductor components

An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carrier substrate with a first surface and a second surface. The semiconductor component is configured on the first surface of the carrier substrate. The second surface of the carrier substrate has a metallization that can be connected to a reference voltage applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate. The first contact of the semiconductor component is electrically connected to the first contacting region.

Optical transmission and/or receiving device

A sensor arrangement has a layer sequence that includes a holding substrate, an auxiliary layer, a detection layer and an insulating layer. The holding substrate holds detection elements. The auxiliary layer extends continuously over the detection elements or contains separate regions which are associated with a detection element. The detection layer has separate detection regions which are contained in a detection element and contain at least one semiconductor component which is sensitive to radiation. The insulating layer has separate insulating regions for electrically insulating the detection regions from a point of contact having electrically conductive connections and pads fitted on the free side. The pads are electrically connected to connecting points which are routed to the semiconductor components. This sensor arrangement can be used for detecting X-ray radiation and can be manufactured with particular ease.

Sensor arrangement for recording a radiation, computer tomograph comprising said sensor arrangement and corresponding production method

An ultraviolet light radiation photodetector includes a quartz lens, a UV transmission filter, a silicon photodiode, and a scintillator layer. After passing through the quartz lens and the UV transmission filter, the UV light to be detected is converted in the scintillator layer, preferably applied to the surface on a light-exiting side of the UV transmission filter, into light radiation of a greater wavelength, for which the silicon photodiode exhibits a greater sensitivity. If desired, an additional edge filter can be used to improve the configuration's drop in sensitivity between 350 and 400 nm.

Growing community of inventors

Munich, Germany

Werner Kuhlmann