Infineon Technologies Ag

Werner Kroninger

Manfred Schneegans

Josef Schwaiger

Ludwig Schneider

Lukas Ossowski

A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.

Semiconductor device and method

A method of making an integrated circuit includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, at least one of the first surface and the second surface including a metallization layer deposited onto the surface. The method additionally includes forming a first trench in the semiconductor wafer extending from one of the first surface and the second surface toward an other of the first surface and the second surface. The method further includes sawing a second trench in the other surface until the second trench communicates with the first trench, thus singulating the integrated circuit from the semiconductor wafer.

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Wuppertal, Germany

Werner Kroninger