Asm IP Holding B.v.

Imec Vzw

Katholieke Universiteit Leuven

Werner Knaepen

Dieter Pierreux

Bert Jongbloed

Jan Willem Maes

Viljami J Pore

Gido Van Der Star

Qi Xie

Toshiya Suzuki

David Kurt De Roest

Roel Gronheid

Krzysztof Kamil Kachel

Hideaki Fukuda

Lucian C Jdira

Steven R A Van Aerde

Kelly Houben

Arjun Singh

Suvi P Haukka

Ivo Johannes Raaijmakers

Hessel Sprey

Ren-Jie Chang

Krzysztof Kachel

Steven Van Aerde

Maarten Stokhof

Panagiota Arnou

Pia Homm Jara

Cornelis Thaddeus Herbschleb

Eric James Shero

Atsuki Fukazawa

Petri Raisanen

Charles Dezelah

Herbert Terhorst

Kunitoshi Namba

Giuseppe Alessio Verni

Chris G M De Ridder

Yosuke Kimura

Cornelius A Van Der Jeugd

Wataru Adachi

Theodorus Oosterlaken

Jeroen Fluit

Chris De Ridder

Kornelius Haanstra

Peter Marc Zagwijn

Robin Roelofs

Hari Pathangi Sriraman

Wilco A Verweij

Atsuki Fukuzawa

Marinus Josephus De Blank

Arjen Klaver

Ruslan Kvetny

Methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Method of forming a vanadium nitride-containing layer

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

Substrate processing apparatus and method for processing substrates

A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

Methods and systems for delivery of vanadium compounds

A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

Substrate processing apparatus with an injector

A sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Method and apparatus for filling a gap

Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Method of forming vanadium nitride-containing layer

There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising:

Layer forming method and apparatus

A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500&#xb0; C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600&#xb0; C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

Method for forming a layer provided with silicon

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

The disclosure relates to a sequential infiltration synthesis apparatus comprising:

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Leuven, Belgium

Werner Knaepen