Sensirion Ag

Sensirion Automotive Solutions Ag

Werner Hunziker

David Pustan

Felix Mayer

Markus Graf

Franziska Brem

Stephan Braun

Mark Hornung

Lukas Bürgi

Dominik Niederberger

Matthias Streiff

Eric Monnin

Robert Sunier

René Hummel

Frank Gütle

Thomas Uehlinger

Johannes Bühler

Lukas Rüthemann

Lukas Hoppenau

Christoph Schanz

Frank Rock

Matthias Boeller

Stephen Braun

Peter Morf

Lukas BÜRGI

Frank Guetle

Frank RÖCK

A photoacoustic gas sensor device for determining a value indicative of a presence or a concentration of a component in a gas comprises a measurement cell enclosing a measurement volume and a gas permeable area in the measurement cell for a gas to enter the measurement volume. An electromagnetic radiation source is arranged to emit electromagnetic radiation into the measurement volume, and a pressure transducer is arranged to measure a sound wave generated by the component in response to an absorption of electromagnetic radiation by the component in the measurement volume. In one aspect, the gas permeable area is represented by a porous gas permeable membrane with an average pore size of the porous gas permeable membrane between 10 nm and 1 μm. In another aspect the gas permeable area is represented by an area of the measurement cell containing holes reaching through an otherwise gas tight material of the measurement cell, with a diameter of the holes between 100 nm and 10 μm.

Photoacoustic gas sensor device

A particulate matter (PM) sensor comprises a substrate forming a cavity (), the substrate comprising a semiconductor chip (), and a light source () arranged in the cavity (). The light source () is adapted to emit a light beam (). The light beam () forms a detection volume () for particulate matter () outside the cavity (). Optionally, the particulate matter sensor comprises an optical element () delimiting the cavity () at one end. The optical element () is configured to shape the light beam (). Further, the particulate matter sensor comprises at least one photodetector () that is integrated into a surface of the semiconductor chip (). The surface into which the at least one photodetector () is integrated faces the detection volume (). The at least one photodetector () is adapted to detect light () scattered by particulate matter () in the detection volume ().

Integrated particulate matter sensor with cavity

The invention relates to a sensor device () for detecting a gas (G), particularly a permanent gas such as H, CO, CO, CH, comprising: an adsorption filter () comprising a body () consisting of a molecular sieve material, a sensing element () for detecting said gas (G), and a carrier () for carrying the sensing element (), wherein the carrier () comprises an opening () via which said gas (G) to be detected can reach the sensing element (), and wherein the adsorption filter () is connected, particularly glued, to the carrier () and closes said opening () so that said gas (G) to be detected can diffuse through said body () towards the sensing element ().

Sensor device for detecting a permanent gas

A sensor package comprises a sensor chip () with a sensitive element () exposed to an environment of the sensor package, and contact pads () for electrically contacting the sensor package. Electrical connections () are applied between the sensor chip () and the contact pads (). A molding compound () at least partially encloses the sensor chip () and the contact pads (). A unit () consisting of the sensor chip () and optionally of a die pad () supporting the sensor chip () is arranged such that a top surface (ts) of the unit () does not protrude from a level defined by a top surface (ts) of the contact pads (), and a bottom surface (bs) of the unit () does not protrude from a level defined by a bottom surface (bs) of the contact pads ().

Sensor package

A sensor device comprises a sensitive element () and a support () for the sensitive element, the support having a surface () with an access opening () to the sensitive element (). A layer of adhesive material () covers at least parts of the surface (). A venting medium () extends over the entire surface () of the support () and the access opening () and is attached to the support () by the layer of adhesive material ().

Sensor device

A flow sensor package comprises a chip comprising a sensitive structure for sensing the flow of a fluid and an encapsulation at least partly encapsulating the chip. A recess in the encapsulation contributes to a flow channel for guiding the fluid, which recess exposes at least the sensitive structure of the chip from the encapsulation, and which recess extends beyond an edge of the chip.

Flow sensor package

A gas sensor package comprises a gas sensor chip with a layer sensitive to a gas, and with a heater for heating the sensitive layer. Contact pads are provided for electrically contacting the gas sensor package and a die pad is provided for mounting the gas sensor chip to. Electrical connections connect the gas sensor chip and the contact pads. A molding compound at least partially encloses the gas sensor chip. An opening in the molding compound provides access to the sensitive layer of the gas sensor chip. One of the contact pads serves as a pin for supplying electrical current to the heater of the gas sensor chip.

Gas sensor package

A sensor package comprises a carrier comprising a through hole, and a sensor chip with a front side and a back side and a recess in the back side. The sensor chip is attached to the carrier with its back side facing the carrier by means of an attachment layer thereby defining a first area of the carrier the sensor chip rests on and a second area of the carrier facing the recess. The through hole is arranged in the first area of the carrier.

A semiconductor package including an integrated device, the package having a front side, a back side and side walls linking the front and back sides, wherein each side wall is coated, to at least 80% of its area, with a coating material different from the material(s) of the back and front sides. A method of manufacturing a semiconductor package by providing an assembly containing an array of the packages, the assembly having thickness dand being attached to a dicing tape of thickness dd, fabricating a set of first dicing streets with width wand depth d&#x3c;(d+dd), filling the first dicing streets at least partially with a coating material, and fabricating, in the coating material in each first dicing street, a second dicing street with width w&#x2266;wand depth d&#x2267;dbut &#x3c;(d+dd).

Semiconductor package with coated side walls and method of manufacture

In a method for manufacturing a sensor chip a spacer () is arranged at the front side () of a substrate () at which front side () a sensing element () is arranged, too. Holes () are etched for building vias () extending through the substrate () between the front side () of the substrate () and its back side (). After etching, the holes () are filled with conductive material to complete the vias (). The spacer () provides protection to the sensing element () and the sensing chip throughout the manufacturing process.

Sensor protection

The sensor assembly comprises a substrate (), such as a flexible printed circuit board, and a sensor chip () flip-chip mounted to the substrate (), with a first side () of the sensor chip () facing the substrate (). A sensing area () and contact pads () are integrated on the first side () of the sensor chip () and located in a chamber () between the substrate () and the sensor chip (). Chamber () is bordered along at least two sides by a dam (). Underfill () and/or solder flux is arranged between the sensor chip () and the substrate (), and the dam () prevents the underfill from entering the chamber (). An opening () extends from the chamber to the environment and is located between the substrate () and the sensor chip () or extends through the sensor chip ().

Sensor mounted in flip-chip technology on a substrate

The sensor assembly comprises a substrate (), such as a flexible printed circuit board, and a sensor chip () flip-chip mounted to the substrate (), with a first side () of the sensor chip () facing the substrate (). A sensing area () and contact pads () are integrated on the first side () of the sensor chip (). Underfill () and/or solder flux is arranged between the sensor chip () and the substrate (). The sensor chip () extends over an edge () of the substrate (), with the edge () of the substrate () extending between the contact pads () and the sensing area () over the whole sensor chip (). A dam () can be provided along the edge () of the substrate () for even better separation of the underfill () and the sensing area (). This de sign allows for a simple alignment of the sensor chip on the substrate () and prevents underfill () from covering the sensing area ().

Sensor mounted in flip-chip technology at a substrate edge

The flow sensor or other type of sensor comprises a package having a cylindrical section arranged between an anchor section and a head section. The diameter of the anchor section is typically larger than the diameter of the cylindrical section, which in turn is typically larger than the diameter of the head section. A sensor chip is embedded partially into the package, with a sensitive area being exposed to the surroundings. The sensor can e.g. be inserted into a bore having a diameter matching the one of the cylindrical section.

Sensor in a moulded package and a method for manufacturing the same

A method for packaging a sensor device having a sensitive structure integrated on a semiconductor chip is provided. When molding the device package, an inward extending section of the mold maintains an access opening to the sensor. A buffer layer is arranged on the chip between the inward extending section and the sensitive structure. The buffer layer protects the sensitive structure from damage by the inward extending section and acts as a seal while casting the housing. The buffer layer also covers at least part of the semiconductor electronic components of the circuitry integrated onto the chip. By covering these components, mechanical stress, as it is e.g. caused by different thermal expansion coefficients of the packaging and the chip, can be reduced.

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Werner Hunziker