Infineon Technologies Ag

Siemens Aktiengesellschaft

Polaris Innovations Limited

Werner Fischer

J&ouml;rg Thiele

Rainer Pforr

Marc Hiller

Jörg Hassel

Rainer Sommer

Burkhard Ludwig

Carsten Probol

Dirk Meyer

Fritz Gans

Christian Dietrich

Jörg Thiele

The invention relates to a method for identifying dirt and/or dew on components of a voltage intermediate circuit converter. According to the invention, the temporal curve of a partial discharge pulsed current is detected at least during a precharging process of an intermediate circuit capacitor of the voltage intermediate circuit converter comprising at least one capacitor, wherein a frequency spectrum is calculated from said current pulse, and wherein depending of the result, a dirt warning and/or a dew warning is activated. Thus, the degree of dirt and/or dew of said voltage intermediate circuit converter can be determined at least during a charging process of an intermediate circuit capacitor of a voltage intermediate circuit converter, thereby preventing a breakdown including the consequences thereof.

Method for identifying dirt and/or dew on components of a voltage intermediate circuit converter

A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

Mask for optical projection systems, and a process for its production

Masks are produced for the fabrication of semiconductor structures based on layout data that has information for defining a mask layout with individual geometric structure elements. Layout data generated previously for a mask layout is checked to see whether geometric design requirements are satisfied. In the event of a violation of design requirements, the corresponding error locations in the mask layout are located. Further layout data are then generated, which contain information for defining correction figures to correct the respective error locations. The further layout data are linked with the layout data, so that the layout data are modified. This permits automated modification of the layout data and their technology-dependent optimization.

Method of producing masks for fabricating semiconductor structures

Growing community of inventors

Heilsbronn, Germany

Werner Fischer