Globalfoundries Inc.

Globalfoundaries Inc.

Wern Ming Koe

The present disclosure relates to a structure which includes a diode-based Dickson charge pump which is configured to use an independent multi-gate device to reduce a threshold voltage of a plurality of transistor diodes during a charging and pumping phase.

Switched-capacitor charge pump with reduced diode threshold voltage and on state resistance

Switched-capacitor charge pump implemented in FDSOI process technology and a method of forming them are provided. Embodiments include providing a FDSOI substrate; providing a plurality of stages of a first and a second pair of an NFET and PFET over the FDSOI substrate coupled between an input terminal and an output terminal, the first and second pair of each stage being opposite each other; providing a plurality of a first and a second capacitor over the FDSOI substrate, each first and second capacitor connected to a first and a second pair of NFET and PFET of a stage, respectively; connecting a back-gate of a NFET and a back-gate of a PFET of each pair; connecting the connected NFET and PFET back-gates to a front-gate of the pair; and connecting a source of each pair to a front gate of an opposite pair within the stage.

Method for reducing switch on state resistance of switched-capacitor charge pump using self-generated switching back-gate bias voltage

Current mirror devices and methods for operating a current mirror device. The current mirror device includes a first transistor having a gate, a source, a drain, and a back gate. The drain and the gate of the first transistor are coupled to an input node of the current mirror device. The current mirror device further includes a second transistor having a gate, a source, a drain, and a back gate. The drain of the second transistor is coupled to an output node of the current mirror device, and the gate of the second transistor is coupled to the gate of the first transistor and to the input node. A voltage source supplies a bias voltage to the back gate of the first transistor that adjusts a threshold voltage of the first transistor and to the back gate of the second transistor that adjusts a threshold voltage of the second transistor.

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Irving, TX, United States of America

Wern Ming Koe