Samsung Electronics Co., Ltd.

Genitech, Inc.

Weon-hong Kim

Seok-Jun Won

Min-Woo Song

Moon-kyun Song

Yong-Kuk Jeong

Ha-Jin Lim

Jung-Min Park

Dae-jin Kwon

Dae-Jin Kwon

Jin-Ho Do

Dae-Kwon Joo

Dae-youn Kim

Yong-min Yoo

Min-joo Lee

Young-Hoon Kim

Moon-han Park

Pan-Kwi Park

Kang-soo Chu

Soo-jung Choi

Gi-Gwan Park

Hoi-Sung Chung

Jung-Hyoung Lee

Jung-min Park

Dong-su Yoo

Dong-Suk Shin

Jae-Gon Lee

Hyung-suk Jung

Young-hoon Kim

Kyung-il Hong

Dong-Su Yoo

Eun-Gon Kim

Sun-Mi Song

An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

Integrated circuit device and method of manufacturing the same

An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.

Integrated circuit devices

Integrated circuit devices and methods of manufacturing the same

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

In a method of forming a layer, a substrate is loaded into a chamber and placed at a home position that is a first relative angular position. A process cycle is performed a number of times while the substrate is at the home position. The cycle includes directing source gas onto the substrate at a first location adjacent the periphery of the substrate, purging the chamber, directing reaction gas onto the substrate from the first location, and purging the chamber. The cycle is performed another number of times while the substrate is at another relative angular position, i.e., at a position rotated about its general center relative from the home position.

Deposition methods of forming a layer while rotating the substrate in angular increments and methods of manufacturing a semiconductor device using the same

In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.

Methods of manufacturing semiconductor devices

Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.

Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer

A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al).

Method for fabricating semiconductor device including nitrided gate insulator

A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Semiconductor device and method for fabricating the same

A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Method of fabricating semiconductor device

Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an 'A' element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an 'M' crystalline structure. The &#x201c;A&#x201d; element about 1 at % to about 5 at % of the total content of the &#x201c;A&#x201d; element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a &#x201c;T&#x201d; crystalline structure through a phase transition process, wherein the &#x201c;T&#x201d; crystalline structure is different from the &#x201c;M&#x201d; crystalline structure. An upper layer is formed on the &#x201c;T&#x201d; crystalline dielectric.

Method of forming a high-k crystalline dielectric

Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Weon-hong Kim