Wuhan University

Wenzhi Yu

Wei Zhou

Shengwen Tang

Hubao A

Jingtao Chen

Zhen He

Yang Li

Xiang Ji

Xiaofei Xu

A method of preparing a hydrated calcium silicate (C&#x2014;S&#x2014;H) nano-film. The method includes: 1) synthesizing a hydrated calcium silicate powder having a calcium to silicon ratio (Ca/Si) of 0.5-3.0; 2) calcining the C&#x2014;S&#x2014;H powder obtained in 1) for 2-3 hours under a temperature of 150-250&#xb0; C., cooling to approximately 25&#xb0; C., and pressing the C&#x2014;S&#x2014;H powder under a pressure of 100-200 megapascal, to yield a target material; 3) fixing a substrate on a sample table of a magnetron sputtering apparatus, placing the target material obtained in 2) in a target position of the magnetron sputtering apparatus, pre-sputtering the target material for 5-10 minutes, rotating the substrate at a constant speed, sputtering the target material for 30-300 minutes, to yield a nano-film; and 4) soaking the nano-film obtained in 3) into in a saturated aqueous solution of calcium hydroxide at approximately 25&#xb0; C. for 1-3 days.

Method of preparing hydrated calcium silicate nano-film

A method of preparing a cement hydration product nano-thin film, the method including: (1) preparing a cement hydration product; (2) preparing a water sacrificial layer film; (3) depositing the cement hydration product obtained in (1) on the surface of the water sacrificial layer film obtained in (2) to obtain a cement hydration product film; and (4) immersing the cement hydration product film in a saturated aqueous solution of calcium hydroxide to dissolve the water sacrificial layer film to obtain a nano-thin film of the cement hydration product.

Method of preparing nano-thin film of cement hydration product

A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7AlOor C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300&#xb0; C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300&#xb0; C., and holding the temperature for 10-120 hours.

Method of manufacturing semiconductor material from mayenite

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Wuhan, China

Wenzhi Yu