Applied Materials, Inc.

Apple Inc.

Wenyu Zhang

Paul F Ma

Wei V Tang

Yixiong Yang

Liqi Wu

Naomi Yoshida

Shih Chung Chen

Lin Dong

Siddarth A Krishnan

Yu Lei

Yi Xu

Ashish Agarwal

Matthew H Thorn

Guoqiang Jian

Chi-Chou Lin

Sean Michael Harold

Fei Peng

Douglas Isaac Friedman

Leticia Marie Alarcón

Mei Yin Chang

David P Thompson

Michael Patrick Chudzik

Seshadri Ganguli

Huixiong Dai

Hao Chen

Kai Wu

Christopher S Ngai

Wenhui Wang

Steven C H Hung

Keith Tatseun Wong

Mario Dan Sanchez

Vikash Banthia

Atashi Basu

Chang Ke

Yongmei Chen

Jing Zhou

Xinming Zhang

Ke Chang

Srividya Natarajan

Drew Phillips

Jia Ye

Leung Kway Lee

Kaliappan Muthukumar

Chen Han Lin

Chen-Han Lin

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Methods for selective deposition using self-assembled monolayers

The disclosed techniques generally relate to devices and methods for generating cropped images in which one or more features of interest are preserved or emphasized. In one implementation, such features of interest may include facial features. In accordance with certain implementations, location and extent of such features may be identified and used in conjunction with information regarding display characteristics so as to generate cropped images preserving or emphasizing the feature of interest when displayed on a given device.

Dynamic image analysis and cropping

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

Method for forming a layer

Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.

Methods of reducing or eliminating defects in tungsten film

Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl, WOClor TaCl. Methods of improving the selectivity of etch processes are also disclosed.

Methods of increasing selectivity for selective etch processes

Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films

Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Aluminum content control of TiAIN films

Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl, WOClor TaCl. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

Selective etch of metal nitride films

Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof

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San Jose, CA, United States of America

Wenyu Zhang