Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Vmware, Inc.

Nicira, Inc.

Boe Technology Groupco., Ltd.

Wenyu Zhang

Jing Li

Donghai Han

Zhenyu Xie

Hua Wang

Xin Zhao

Jian Nan Guo

Tiansheng Li

Qiong Wang

Da Xu

Weifeng Zhou

Xu Chen

Raju Koganty

Jiaxiang Zhang

Changjiang Yan

Jingchun Jason Jiang

Da Wan

Xing Ming

Sahan Bamunavita Gamage

Danting Liu

Jianwei Ma

Bolt Zhang

Ming Shu

Lei Lu

Zongmin Tian

Benli Ye

Xin Qi

Hao Dong

Jingfeng Zhang

Wang Qiong

Liangjie Li

Example methods and systems for a network management entity to perform adaptive packet flow monitoring. One example method may comprise receiving a request to monitor a packet flow between a first virtualized computing instance supported by a first host and a second virtualized computing instance supported by a second host. The method may also comprise activating a first set of checkpoints by instructing the first host and/or the second host to monitor the packet flow using the first set of checkpoints. The method may further comprise: in response to detecting a predetermined event based on first performance metric information associated with the packet flow, activating a second set of checkpoints by instructing the first host and/or the second host to monitor the packet flow using the second set of checkpoints.

Adaptive packet flow monitoring in software-defined networking environments

Systems and methods for reducing network cost in a hyper-converged infrastructure are disclosed. The network cost of workload pairs can be assessed. Migration of the workloads can be considered to reduce the network cost and improve the network efficiency of the hyper-converged infrastructure.

Network costs for hyper-converged infrastructures

The present disclosure relates to a detection panel, a manufacturing method thereof and a detection device. The detection panel comprises: a base substrate and a photoelectric conversion structure located on the base substrate, and a display structure located on a side of the photoelectric conversion structure facing away from the base substrate and electrically connected to the photoelectric conversion structure; wherein the photoelectric conversion structure is configured to convert an optical signal into an electrical signal, and the display structure is configured to perform image display according to the electrical signal.

Detection panel, manufacturing method thereof and detection device

Example methods are provided for configuring traffic flow monitoring in a virtualized computing environment. The method may comprise identifying a first logical entity and a second logical entity for which traffic flow monitoring is required and determining a span associated with the first logical entity and the second logical entity. The span may include a first host supporting the first logical entity and a second host supporting the second logical entity. The method may also comprise, based on the span, configuring the first host to monitor a first traffic flow travelling through the first logical entity at the first host, and the second host to monitor a second traffic flow travelling through the second logical entity at the second host.

Configuring traffic flow monitoring in virtualized computing environments

An example method is provided for a host to perform load balancing for multiple network interface controllers (NICs) configured as a team. The method may comprise the host detecting egress packets from a virtualized computing instance supported by the host for transmission to a destination via the team. The method may also comprise the host selecting one of the multiple NICs from the team based on load balancing weights associated with the respective multiple NICs. Each load balancing weight may be assigned based on a network speed supported by the associated NIC, and different load balancing weights are indicative of different network speeds among the multiple NICs in the team. The method may further comprise the host sending, via the selected one of the multiple NICs, the egress packets to the destination.

Load balancing for a team of network interface controllers

An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.

Array substrate and method of manufacturing the same, display panel, and display device

A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.

Thin film transistor, manufacturing method thereof and array substrate

A thin film transistor (TFT) array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method comprises: forming a first passivation layer () on a substrate (), and forming a board wiring PAD-region via hole () in the first passivation layer () above the board wiring PAD region () through a first patterning process; forming a second passivation layer () on the substrate () formed with the board wiring PAD-region via hole (), and forming a pixel-region via hole () in the first passivation layer () and the second passivation layer () above the display electrode () through a second patterning process in such a way that the pixel-region via hole () has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate () formed with the pixel-region via hole () to form a second display electrode.

Thin film transistor array substrate, manufacturing method thereof, and display device

An array substrate and a display device are presented. The array substrate includes: a base substrate and a plurality of thin film transistor units located on the base substrate, wherein, the thin film transistor unit includes: a first gate electrode located on the base substrate, a gate insulating layer located on the first gate electrode, a drain electrode disposed in the same layer as the first gate electrode, an active layer located on the drain electrode, a source electrode located on the active layer, a first transparent conductive layer is provided between the base substrate and the first gate electrode and the drain electrode that are disposed in the same layer, and the gate insulating layer is also disposed between the first gate electrode plus the first transparent conductive layer beneath it and the drain electrode plus the first transparent conductive layer beneath it.

Array substrate and method for manufacturing the same, display device

The present invention relates to the field of displays and discloses a color filter substrate, a display device and a method for manufacturing a color filter substrate. The color filter substrate comprises: a transparent substrate; a light-electricity converting module, provided on the transparent substrate and configured to convert a light beam incident from the transparent substrate into electric energy. The display device comprises the color filter substrate. In the invention, a light-electricity converting module is set on a transparent substrate, thus a light beam incident from the transparent substrate may be converted into electric energy, so that the sunlight transmitted into a display panel may be transformed into electric energy; because the solar energy is abundant, it may meet the demand of the display panel, and the service time of the display panel may be prolonged.

Color filter substrate, display device and method for manufacturing a color filter substrate

Embodiments of the invention provide a fabricating method a thin film transistor, a thin film transistor and a display panel, so as to improve carrier mobility in the polycrystalline silicon. The fabricating method a thin film transistor comprises following M, depositing an inducing layer on a substrate; M, etching a recess in the inducing layer by an etching process, the recess having an edge with a prescribed shape; M, depositing an amorphous silicon layer in the recess having an edge with a prescribed shape, and inducing the amorphous silicon layer to form a polycrystalline silicon layer by crystallization method, polycrystalline silicon grains in the polycrystalline silicon layer arranging in a direction vertical to the edge of the recess by the limitation of the edge of the recess, and the polycrystalline silicone layer and the inducing layer together forming a semiconductor layer; and M, forming a gate insulating layer, a gate, a passivation layer and a source and a drain connecting with the semiconductor layer sequentially on the semiconductor layer.

Fabricating method of thin film transistor, thin film transistor and display panel

Embodiments of the invention disclose an array substrate and a method for manufacturing the same, and a display device. The method for manufacturing an array substrate comprising: forming a gate metal layer, wherein the gate metal layer comprises gate lines; film-forming an active layer and film-forming a signal line metal layer, wherein the signal line metal layer comprises data lines; and forming both a pattern of the active layer and a pattern of the signal line metal layer simultaneously using a half-tone mask process, wherein after film-forming the active layer and before film-forming the signal line metal layer, the method further comprising: hollowing out a first region of the active layer through a patterning process, wherein the first region is below the data lines in a display area, and the first region excludes portions of the active layer corresponding to overlapping regions of the data lines and the gate lines.

Array substrate and method for manufacturing the same, and display device

A TFT-LCD array substrate, a manufacturing method thereof and a liquid crystal display panel are provided in the invention. The TFT-LCD array substrate comprises a plurality of first gate lines and a plurality of first data lines, and a plurality of pixel regions are defined by intersecting the first gate lines and the first data lines with each other. A first pixel electrode and a first TFT are formed in each of the pixel regions, and a second TFT and a second pixel electrode are further comprised in each of the pixel regions. The second TFT is connected with the second pixel electrode, the first pixel electrode and the second pixel electrode form the voltage difference to drive the reversion of the liquid crystal molecules, and the first TFT and the second TFT are turned on or off simultaneously.

TFT-LCD array substrate wherein data line segments in adjacent pixel regions within a same column are connected by a first connection bar

A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.

Growing community of inventors

Beijing, China

Wenyu Zhang