International Business Machines Corporation

Adeia Semiconductor Bonding Technologies Inc.

Screen Spe USA LLC

Wenyu Xu

Kangguo Cheng

Chen Zhang

Xin Miao

Zhenxing Bi

Peng Xu

Ruilong Xie

Philip Joseph Oldiges

Nicolas J Loubet

Zuoguang Liu

Tenko Yamashita

Indira P Seshadri

Hemanth Jagannathan

Julien Frougier

Ekmini Anuja De Silva

Stuart A Sieg

Pietro Montanini

Jing Guo

Brent A Anderson

Choonghyun Lee

Soon-Cheon Seo

Fee Li Lie

Heng Wu

Injo Ok

Andrew Mark Greene

Yann Mignot

John Ryan Sporre

Ashim Dutta

Lan Yu

Tao Li

Tsung-Sheng Kang

Jon Fayad

Luciana Meli-Thompson

Dustin Wayne Janes

Eric Evans

Domenico DiPaola

A method for forming a planarization layer is provided that can include depositing an organic planarization layer on a deposition surface using a spin on deposition method; and treating the deposited organic planarization layer with a solvent anneal. In some embodiments, a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer. The method may further include curing the deposited organic planarization layer with a thermal anneal.

Solvent annealing of an organic planarization layer

A semiconductor nanosheet device including semiconductor channel layers vertically aligned and stacked one on top of another, separated by a work function metal, and a second layer between two first layers, the second layer and two first layers between the semiconductor channel layers and a substrate. A semiconductor device including a lower first layer, a second layer, and a source drain region between a first set of semiconductor channel layers vertically aligned and stacked one on top of another, and a second set of semiconductor channel layers. A method including forming a stack sacrificial layer, a stack of nanosheet layers, forming a cavity by removing the stack sacrificial layer, and simultaneously forming a first layer on an upper surface of the stack sacrificial layer, on vertical side surfaces of the set of sacrificial gates, and an upper first layer and a lower first layer in a portion of the cavity.

Nanosheet transistor with enhanced bottom isolation

A semiconductor device is provided. The semiconductor device includes a bottom epitaxial layer, a gate stack formed over the bottom epitaxial layer, the gate stack including a work function metal (WFM) layer, a channel fin formed on the bottom epitaxial layer, a first interlayer dielectric (ILD) layer formed in a gate landing area over the gate stack, a second ILD layer formed in an area other than the gate landing area, and a WFM encapsulation layer formed between the first ILD layer and the second ILD layer, and formed on sidewalls of the gate stack.

Vertical transport field-effect transistor with gate patterning

Vertical transport field-effect transistors are formed on active regions wherein the active regions each include a wrap-around metal silicide contact on vertically extending side walls of the active region. Such wrap-around contacts form self-aligned and reliable strapping for SRAM bottom nFET and pFET source/drain regions. Buried contacts of SRAM cells may be used to strap the wrap-around metal silicide contacts with the gates of inverters thereof. Wrap-around metal silicide contacts provide additional contacts for logic FETs and reduce parasitic bottom source/drain resistance.

Vertical transport field-effect transistor with ring-shaped wrap-around contact

A semiconductor structure may include a magnetic tunnel junction layer on top and in electrical contact with a microstud, a hard mask layer on top of the magnetic tunnel junction layer, and a liner positioned along vertical sidewalls of the magnetic tunnel junction layer and vertical sidewalls of the hard mask layer. A top surface of the liner may be below a top surface of the hard mask layer. The semiconductor structure may include a spacer on top of the liner. The liner may separate the spacer from the magnetic tunnel junction layer and the hard mask layer. The semiconductor structure may include a first metal layer below and in electrical contact with the microstud and a second metal layer above the hard mask layer. A bottom portion of the second metal layer may surround a top portion of the hard mask layer.

Nonmetallic liner around a magnetic tunnel junction

A method is presented for forming a nanosheet device. The method includes forming nanosheets stacks over a substrate, the nanosheet stacks separated by shallow trench isolation (STI) regions, forming a first hardmask material over the nanosheet stacks, depositing a sacrificial gate, recessing the sacrificial gate such that recesses are defined adjacent the first hardmask material, wherein a top surface of the sacrificial gate is below a top surface of the first hardmask material, forming a second hardmask material in the recesses, defining a uniform gate length in both the first and second hardmask materials, and selectively trimming the first hardmask material such that a gate length over the nanosheet stacks is less than a gate length over the STI regions.

Short gate on active and longer gate on STI for nanosheets

Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region.

Hybrid-channel nano-sheet FETs

A vertical field-effect transistor includes a substrate comprising a semiconductor material; a first set of fins formed from the semiconductor material and extending vertically with respect to the substrate; and a second set of fins extending vertically with respect to the substrate, wherein ones of the second set of fins abut ones of the first set of fins. The second set of fins comprises a dielectric material.

Vertical field-effect transistor with dielectric fin extension

A method for manufacturing a semiconductor device includes forming a source layer on a semiconductor substrate, forming a channel layer on the source layer, and forming a drain layer on the channel layer. The source, channel and drain layers are patterned into at least one fin, and a cap layer is formed on a lower portion of the at least one fin. The lower portion of the at least one fin includes the source layer and part of the channel layer. The method further includes forming a gate structure comprising a gate dielectric layer and a gate conductor on the at least one fin and on the cap layer. The cap layer is positioned between the lower portion of the at least one fin and the gate dielectric layer.

Tunnel field-effect transistor with reduced subthreshold swing

Devices and methods are provided for forming single diffusion break isolation structures for integrated circuit devices including gate-all-around FET devices such as nanosheet FET devices and nanowire FET devices. For example, a semiconductor integrated circuit device includes first and second gate-all-around field-effect transistor devices disposed in first and second device regions, respectively, of a semiconductor substrate. A single diffusion break isolation structure is disposed between the first and second device regions. The single diffusion break isolation structure includes a dummy gate structure disposed on the semiconductor substrate between a first source/drain layer of the first gate-all-around field-effect transistor device and a second source/drain layer of the second gate all-around field-effect transistor device. The single diffusion break isolation structure is configured to electrically isolate the first and second source/drain layers.

Single diffusion break isolation for gate-all-around field-effect transistor devices

A method of fabricating a semiconductor device is described. The method includes forming a nanosheet stack on a substrate, the nanosheet stack includes nanosheet channel layers. A gate is formed around the nanosheet channel layers of the nanosheet stack. A strained material is formed along a sidewall surface of the gate. The strained material is configured to create strain in the nanosheet channel layers of the nanosheet stack.

Nanosheet transistors with strained channel regions

A semiconductor device including a plurality of nanosheet transistor channels adjacent to a source/drain. An inner spacer located between each of the plurality of nanosheet transistor channels and the inner spacer wraps around the end of each of the plurality of nanosheet transistors. The source/drain is in contact with the inner spacer and each of the plurality of nanosheet transistor channels. A gate surrounding each of the plurality of nanosheet transistor channels and an electrical contact connected to the source/drain. An ultra low-k spacer located between the gate and the source/drain. The ultra low-k spacer reduces the parasitic capacitance of the nanosheet transistor.

Nanosheet transistor with ultra low-k spacer and improved patterning robustness

The subject disclosure relates to high mobility complementary metal-oxide-semiconductor (CMOS) devices and techniques for forming the CMOS devices with fins formed directly on the insulator. According to an embodiment, a method for forming such a high mobility CMOS device can comprise forming, via a first epitaxial growth of a first material, first pillars within first trenches formed within a dielectric layer, wherein the dielectric layer is formed on a silicon substrate, and wherein the first pillars comprise first portions with defects and second portions without the defects. The method can further comprise forming second trenches within a first region of the dielectric layer, and further forming second pillars within the second trenches via a second epitaxial growth of one or more second materials using the second portions of the first pillars as seeds for the second epitaxial growth.

Method of forming high mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator

A method of forming a vertical fin field effect transistor device is provided. The method includes forming a vertical fin and fin template on a bottom source/drain layer, wherein the fin template is on the vertical fin. The method further includes forming a gate structure on the vertical fin and fin template, and forming a top spacer layer on the gate structure. The method further includes removing the fin template to form an opening in the top spacer layer, and removing a portion of a gate electrode of the gate structure to form a cavity; and removing a portion of a gate dielectric layer of the gate structure to form a groove around the vertical fin.

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Wenyu Xu