Tcl Technology Group Corporation

Wenyong Liu

Weiran Cao

Lei Qian

Zhiwen Nie

Ruifeng Li

A quantum dot film includes: one surface grafted with a first ammonium halide ligand; and another surface opposite to the one surface and grafted with a second ammonium halide ligand. The first ammonium halide ligand has a general structural formula: and the second ammonium halide ligand has a general structural formula: n≤12, n≤12, 12≤n≤17, 12≤n≤17, n, n, nand nare natural numbers, Yand Yare independently selected from phenyl or hydrogen, and X is halogen.

Quantum dot film, quantum dot light-emitting diode and preparation method thereof

The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.

Growing community of inventors

Huizhou, China

Wenyong Liu