Applied Materials, Inc.

Wenyi Liu

Yixiong Yang

Wei V Tang

Srinivas Gandikota

Jianqiu Guo

Mark Joseph Saly

Bhaskar Jyoti Bhuyan

Mandyam Sriram

Yong Wu

Arkaprava Dan

Ludovic Godet

Mei Yin Chang

Paul F Ma

Fei C Wang

Kurtis Leschkies

Xin Liu

Jacqueline S Wrench

Yifei Wang

Guoqiang Jian

Chi-Chou Lin

Yumin He

Wei Tang

A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Method of tuning film properties of metal nitride using plasma

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.

Methods for depositing blocking layers on conductive surfaces

The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

Tuning work function of p-metal work function films through vapor deposition

In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

In-situ tungsten deposition without barrier layer

The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400&#xb0; C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.

High pressure annealing of metal gate structures

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Santa Clara, CA, United States of America

Wenyi Liu