Chinese Academy of Sciences

Symantec Corporation

Veritas Technologies LLC

Wenxin Wang

Xianbo Zhang

Hong Yu Chen

Dongxu Sun

Liwei Guo

Junming Zhou

Haiqiang Jia

A computer-implemented method for parallel content-defined data chunking may include (1) identifying a data stream to be chunked, (2) splitting the data stream into a plurality of data sub-streams by alternatingly dividing consecutive bytes of the data stream among the plurality of data sub-streams, and (3) chunking, in parallel, each data sub-stream within the plurality of data sub-streams into a plurality of data segments using a content-defined chunking algorithm. Various other methods, systems, and computer-readable media are also disclosed.

Systems and methods for parallel content-defined data chunking

A system and method for improving performance within a storage system employing deduplication techniques using address manipulation are disclosed. A data segment within a storage object is identified from among a number of data segments within a storage object. The data segment represents data stored in a storage device. Some or all of the data represented by the data segment is stored in a data block that is associated with the data segment. The storage object is then compacted. Compaction includes reordering data segments, including the identified data segment, by performing address manipulation on a data block address of the data block (e.g., an address of the data block within the storage device). The reordering of the data segments changes the order of the data segments within the storage object.

Deduplication system space recycling through inode manipulation

A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer () and n-type GaN layer (), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer () and InGaAlN multi-quantum well structure light emitting layer () and p-type InGaAlN layer () on sapphire or SiC substrate () in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof

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Beijing, China

Wenxin Wang