Waseda University

Wenxi Fei

Hiroshi Kawarada

Aoi Morishita

Masayuki Iwataki

Te Bi

Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FETA includes a silicon oxide filmA formed on a surface of a non-doped diamond layerA, a non-doped diamond layerA formed on a surface of the non-doped diamond layerA using the silicon oxide filmA as a mask, a silicon-terminated layerA formed at an interface between the non-doped diamond layerA and the silicon oxide filmA and at an interface between the non-doped diamond layerA and the silicon oxide filmA, and a gate electrodeA formed on the silicon oxide filmA. The FETA operates using the silicon oxide filmA and an insulating filmA formed on the silicon oxide filmA as a gate insulating filmA and using the non-doped diamond layerA as each of a source region and a drain region.

Diamond field effect transistor and method for producing same

A stack includes: a ruthenium film; and a diamond film that is an epitaxial film formed on the ruthenium film, wherein a crystal plane of a surface of the ruthenium film is a (0001) plane, and a crystal plane of a surface of the diamond film is a (111) plane. A method of manufacturing a stack includes: a step of forming a ruthenium film; and a step of heteroepitaxially growing a diamond film on the ruthenium film, wherein a (111) plane of the diamond film is heteroepitaxially grown on a (0001) plane of the ruthenium film.

Growing community of inventors

Tokyo, Japan

Wenxi Fei