Calterah Semiconductor Technology (shanghai) Co., Ltd

Anji Microelectronics (shanghai) Co., Ltd.

Anji Microelectronics Technology (shanghai) Co., Ltd.

Calterah Semiconductor Technology (shanghai) Technology Co., Ltd.

Wenting Zhou

Jiashu Chen

Tao Liu

Jianfen Jing

Zhengdong Liu

Jian Ma

Yan Zhu

Heng Li

Ying Yao

Xinyuan Cai

Leilei Huang

Wentao Lv

Yafei Shi

Tao Gong

Fazhi An

A transmission line phase shifter, a chip, and a radar sensor are provided. The transmission line phase shifter includes at least one transmission line phase-shifting unit. At a calibration stage, a preset number of transmission line phase-shifting units are configured to be in a state of a first phase or in a state of a second phase and configured to output an output RF signal, such that phase calibration information of each transmission line phase-shifting unit is determinable. At an operation stage, the phase adjusting circuit of the respective transmission line phase-shifting unit is configured to receive a corresponding phase shifting control signal and to adjust the respective transmission line phase-shifting unit, to enable the respective transmission line phase-shifting unit to shift a phase of an input RF signal by a calibrated first phase or a calibrated second phase.

Transmission line phase shifter, system, chip, and radar sensor

Disclosed are a frequency multiplier, a signal transmitter and a radar chip. The frequency multiplier includes a signal generator that is configured to receive an FMCW signal and output a square wave signal at a frequency same as a frequency of the FMCW signal; and a third harmonic amplifier that is coupled to the signal generator and is configured to amplify a third harmonic wave in the square wave signal and output a frequency-tripled FMCW signal. The above-mentioned solution can improve the generation efficiency of the frequency-tripled signal.

Frequency multiplier, signal transmitter and radar chip

A radar system and control method thereof is disclosed. The radar system comprises a plurality of radar units, each comprising: one or more radio frequency (RF) channels configured to receive a reflected signal and then generate an analog input signal according to the reflected signal; and a processing module connected with all the RF channels and configured to sample the analog input signal to obtain a digital signal and perform the first digital signal processing on the digital signal to obtain intermediate data, wherein when the plurality of radar units work jointly, a designated radar unit performs the second digital signal processing on the plurality of intermediate data provided by the plurality of radar units, thereby obtaining result data of the radar system.

Radar system and control method therefor

A radio frequency (RF) inverter, a transmission line phase shifter, a system, a chip, and a radar sensor are provided. The RF inverter includes an inductance circuit and a first phase adjusting circuit that both are arranged symmetrically along a same symmetry axis. The inductance circuit includes a single-ended signal interface and a differential signal interface. The first phase adjusting circuit includes two controlled switches, and each controlled switch is connected between the ground wire and a corresponding ground terminal of a pair of ground terminals in the single-ended signal interface, to enable the inductance circuit to perform in-phase or inverting phase shifting on a received RF signal.

Radio frequency inverter, transmission line phase shifter, system, chip, and radar sensor

A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Chemical mechanical polishing slurry and use thereof

The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.

Chemical-mechanical polishing solution

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.

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Shanghai, China

Wenting Zhou