Huawei Technologies Co., Limited

Huawei Device Co., Ltd.

Huawei Digital Power Technologies Co., Ltd.

Wentao Yang

Peng Liu

Boning Huang

Quan Zhang

Jie Liu

Kang Wang

Haitao Zhen

Junhe Wang

Yanbiao Luo

Yongxiang Yang

Shitao Chen

Xuxing Yan

Qian Zhao

Fayou Yin

Qiong Ruan

Zhihua Liu

Runtao Ning

Chaofan Song

Loucheng Dai

Shizhuo Ye

An insulated gate bipolar transistor (IGBT), a motor control unit, and a vehicle are disclosed. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer and an RC-IGBT device structure feature layer are respectively arranged on two sides of an SJ device structure feature layer. The RC-IGBT device structure feature layer includes a collector and a drain that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode laminated with and electrically connected to the collector, and a second metal electrode laminated with and electrically connected to the drain, and the first metal electrode is electrically isolated from the second metal electrode.

Insulated gate bipolar transistor, motor control unit, and vehicle

The technology of this disclosure relates to an IGBT chip integrating a temperature sensor, and relates to the field of power device technologies, to improve accuracy of temperature monitoring of the IGBT chip. The IGBT chip integrating the temperature sensor includes a cell region, an emitter pad, a gate pad, a gate finger structure, a temperature sensing module, and a conductive shielding structure. The emitter pad is electrically connected to emitters of a plurality of IGBT cells. The gate finger structure is connected between the gate pad and gates of the plurality of IGBT cells. The temperature sensing module includes a temperature sensor, an anode pad, a cathode pad, and a metal lead. The temperature sensor and at least a part of the metal lead are located in the gate finger structure and are insulated from the gate finger structure.

IGBT chip integrating temperature sensor

A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.

DrMOS, integrated circuit, electronic device, and preparation method

Embodiments of this application provide a speaker module and a portable electronic device. The speaker module includes a first speaker module and a second speaker module. The first speaker module includes a first housing and a first speaker monomer accommodated in the first housing, and the first speaker monomer has a first diaphragm. The second speaker module includes a second housing and a second speaker monomer accommodated in the second housing, and the second speaker monomer has a second diaphragm. The first speaker module and the second speaker module are sequentially disposed in a vertical direction, and a vibration direction of the first diaphragm is opposite to a vibration direction of the second diaphragm, so that momentum variations (mv) Δ of the speaker module are offset against each other, thereby resolving a problem that a vibration feeling is strong when the speaker module works.

Speaker module and portable electronic device

A method used by a terminal to detect an earphone status and a terminal are disclosed. The method includes: disabling, by a processor, a path for outputting an audio signal to a second earphone; detecting electrical signals of a first audio output end and a third audio output end of a first earphone; and determining a frequency value of a low-frequency resonant point of the first earphone according to the electrical signals of the first audio output end and the third audio output end, and determining, according to the frequency value of the low-frequency resonant point, whether the first earphone is in an in-position state. In this way, only the electrical signals of the first audio output end and the third audio output end need to be detected, and it may be determined, according to changes of the electrical signals.

Earphone status detection method and terminal

Growing community of inventors

Wuhan, China

Wentao Yang